Liquid crystal device, projection display device and, manufacturing method for substrate for liquid crystal device

ABSTRACT

A liquid crystal device has inorganic alignment layers ( 36, 42 ) disposed on a surface of a liquid crystal layer side of a pair of the substrates, when the range of the average pre-tilt angle θ of liquid crystal molecules  50   a  of the liquid crystal layer is 5 degrees≦θ≦20 degrees, twist angle φ of the liquid crystal molecules ( 50   a ) of the liquid crystal layer, cell gap d, and helical pitch P of the liquid crystal molecules of the liquid crystal layer satisfy the relationship of (0.6/360)φ&lt;d/P&lt;(1.4/360)φ, and when the range of the average pre-tilt angle θ of liquid crystal molecules  50   a  of the liquid crystal layer is θ&gt;20 degrees, twist angle φ of the liquid crystal molecules ( 50   a ) of the liquid crystal layer, cell gap d, and helical pitch P of the liquid crystal molecules of the liquid crystal layer satisfy the relationship of (0.8/360)φ&lt;d/P&lt;(1.6/360)φ.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to liquid crystal devices,projection display devices, and manufacturing methods for substrates forliquid crystal devices. This invention particularly relates to theconstruction of desirable liquid crystal devices to be used as a lightsource for a liquid crystal projector, and to a manufacturing method fora substrate for a liquid crystal device.

[0003] 2. Description of Related Art

[0004] For a projection liquid crystal display device, such as a liquidcrystal projector, there is the three-panel type in which three liquidcrystal panels corresponding to the three primary colors red (R), green(G), and blue (B) are used, and the one-panel type in which one liquidcrystal panel and a color generating device are used. For a liquidcrystal light source which is a part of such a projection liquid crystaldisplay device, active matrix type liquid crystal panels are typicallyused.

[0005] Also, a liquid crystal panel comprises, for example an activematrix type liquid crystal light source and polarizing plates which aredisposed in the front and in the rear of the active matrix type liquidcrystal light source. FIG. 18 is a cross section showing an example ofthe construction of such a conventional liquid crystal light source.

[0006] A liquid crystal light source is made such that liquid crystal isenclosed between two transparent substrates as shown in FIG. 18. Theliquid crystal light valve is provided with a thin film transistor(hereinafter called TFTs) array substrate 10 and facing substrate 20which is disposed to face the TFT array substrate.

[0007] On the TFT array substrate 10, a plurality of scanning lines 3 aand a plurality of data line 6 a are disposed so as to cross like in alattice. A pixel switching TFT 30 is disposed corresponding to the crosspoints of the scanning lines 3 a and the data lines 6 a. The scanninglines 3 a cross over a semiconductor layer la of the TFT 30 viainsulating thin layer 2, and channel area 1 a′ is formed in a crossingarea of the semiconductor layer 1 a. A data line 6 a crossing over thescanning line 3 a is connected electrically to a source area 1 d of thesemiconductor layer la via contact hole 5. Also, pixel electrode 9 a isformed in an area which is surrounded by the scanning lines 3 a and thedata lines 6 a on an upper layer of the data line 6 a. The pixelelectrode 9 a is connected electrically to a drain area le of thesemiconductor layer la via the contact hole 8. An alignment layer 16subjected to an alignment layer treatment by a rubbing treatment isformed on the pixel electrode 9 a. The alignment layer 16 is formed byan organic layer of polyimide.

[0008] In such a TFT array substrate 10, as compared to the area onwhich the pixel electrode 9 a is formed, the thickness of the area inwhich TFT 30 is a non-pixel area, the thickness of the area in which thescanning line 3 a is formed, and the thickness of the area in which dataline 6 a is formed tends to be large because the insulating layers 4 and7 for such areas and the wiring are layered therein; thus, the gapsection is formed on the surface of the alignment layer 16. The gap isparticularly large between the area where the TFT 30 is formed and thearea where the pixel electrode 9 a is formed. Furthermore, if a firstshading layer 11 a is formed under TFT 30 so as to shield a capacityline 3 b and TFT 30 for higher quality display, the gap section tends tobe reality visible.

[0009] Recently, more finely pitched pixels tend to be desired accordingto the requirements for size reduction of the liquid crystal lightsource in view of greater fineness and greater brightness of the liquidcrystal projector. However, for example, if the pixel pitch becomes asfine as 20 μm, there will be areas where effective rubbing treatment onthe alignment layer is impossible because of the gap section on theunderlayer of the alignment layer in the case of liquid crystal lightvalve in which an alignment layer made of an organic layer such aspolyimide is provided; thus, disclination of the liquid crystal occursnearby sometimes degrading display quality. Such a problem becomes moreapparent if the pixel pitch is made finer.

[0010] Also, the intensity of the light incident on the light valve hasincreased for brighter liquid crystal projectors. Because of this, thealignment layer made of an organic layer such as of polyimidedeteriorates due to light and heat, and alignment uniformity of thealignment layer decreases. Thus, the orientation of the liquid crystalmolecules lose uniformity, the contrast of the display decreases, andsometimes ultimately leads to inferior display quality. The reasons suchproblems occur is that the organic layer made of polyimide absorbs someamount of the 400 to 450 nm wavelength visible light, the alignmentlayer deteriorates due to the absorption of the light, the orientationsof the liquid crystal lose alignment uniformity near the deterioratedarea of the alignment layer, and thus degraded display quality results.

[0011] In order to solve such problems, a light source has been providedin which the alignment layer is made of a layer obtained by obliqueevaporation of inorganic material such silicon oxide (SiO) instead of anorganic layer such as polyimide, and in such a way that the liquidcrystal molecules are oriented unidirectionally by the surface formingeffect of the inorganic oblique evaporation layer. The alignment layermade of an inorganic oblique evaporation layer can be formed byunidirectionally vacuum-evaporating the inorganic material onto asubstrate fixed at a certain angle, more specifically from a directionslanted by 10 to 30 degrees to the substrate so as to grow the columnarstructure of the inorganic material disposed at a predetermined angle tothe substrate, and such a method is called a oblique evaporation method.The alignment layer obtained in this way has advantages such as superiorlight resistance and heat-resistance as compared to the alignment layermade of an organic material such as polyimide due to its inorganic layerconstruction, superior durability of the liquid crystal light valve, andloss of alignment uniformity of the liquid crystal caused by incorrectrubbing treatment seen in the case of the organic layer such as one ofpolyimide, even if the pixel pitch is made finer.

[0012] However in contrast to advantages such as light resistance andheat resistance, an alignment layer made of an inorganic layer hasdisadvantages such as weak alignment uniformity of liquid crystals ascompared to an alignment layer made of an organic layer. Accordingly, ina liquid crystal device using an inorganic alignment layer, disclinationeasily occurs if any factor occurs causing loss of alignment uniformityof the liquid crystals; inferior display is provided. Specifically,surfaces of the active matrix substrate forming the liquid crystal lightvalve become irregular when forming switching elements such as TFTs,signal lines such as data lines and scanning lines, and pixel electrodeson the active matrix substrate. Such irregularities in the surfacesproduce shadows on the substrate during oblique evaporation; thus,defective parts may sometimes be generated on the alignment layer. Inthe case in which there are such defects on the alignment layer, theorganic layer may be able to compensate for the defect by its ownsufficient aligning uniformity. However, the aligning uniformity of theinorganic evaporation layer is so weak that disclination may be caused.Because of this tendency, inferior display such as one in which there islight leakage in the domain in which the alignment direction isdifferent occurs, and the display quality decreases due to low contrast.

[0013] As a solution for reducing the disclination, there is a methodcalled a pre-tilt method in which the liquid crystal molecules aredisposed slant to the surface of the substrate in advance when novoltage is impressed. Generally, the disclination can be progressivelyreduced as the pre-tilt angle increases. However, if the pre-tilt angleis increased in the case of an inorganic alignment layer in which thealigning uniformity was originally weak, the spiral structure of theliquid crystals between the substrates becomes unstable. Therefore,inferior display is produced due to the existence of reverse twistdomains which are areas in which the twisting directions of liquidcrystals becomes partially opposite.

[0014] This problem also occurs in liquid crystal devices usingalignment layers made of an inorganic oblique evaporation layer formedon the underlayer on which surface the gap section exists.

[0015] Above problem is not limited to the case of an active matrix typeliquid crystal device using a 3-terminal-type-element such as a TFTelement; but it is a common problem among active matrix type liquidcrystal devices using 2-terminal-type-elements such as a Thin-Film-Diode(hereinafter called TFD) and passive matrix type liquid crystal deviceswhenever an inorganic alignment layer is used in the liquid crystaldevice.

SUMMARY OF THE INVENTION

[0016] This invention was made in consideration of solving the aboveproblems, and an object of the invention is to minimize the inferioralignment of liquid crystals in the liquid crystal device using aninorganic alignment layer in which alignment uniformity is poor, and toprovide a liquid crystal device which can prevent inferior display andlow contrast due to the inferior alignment, and also to provide aprojection display device in which display quality is high by using theabove liquid crystal device.

[0017] Also, an object of this invention is to provide a liquid crystaldevice by which inferior evaporation areas of inorganic materials is notgenerated near the gap section of the underlayer of the alignment layereven if pixel elements are as fine as 20 μm or less, to prevent theoccurrence of inferior alignment of the liquid crystals due to theirregularities in the alignment layer due to inferior evaporation areasof inorganic material, and to reduce the occurrence of inferior display.A manufacturing method for a substrate for such a liquid crystal deviceis another object of the present invention.

[0018] In order to achieve the above objects, a liquid crystal device ofthis invention is characterized in that a liquid crystal layer (50) isdisposed between a pair of substrates (20) facing each other, inorganicalignment layers (36, 42) are disposed on a surface of a liquid crystallayer side of the pair of the substrates, average pre-tilt angle θ ofliquid crystal molecule 50 a of the liquid crystal layer is 5degrees≦θ≦20 degrees, twist angle φ of the liquid crystal molecule (50a) of the liquid crystal layer, cell gap d, and helical pitch P of theliquid crystal molecule of the liquid crystal layer satisfy theRelationship R1 of (0.6/360)φ<d/P<(1.4/360)φ.

[0019] Also, a liquid crystal device of the present invention ischaracterized in that a liquid crystal layer (50) is disposed between apair of substrates (20) facing each other, inorganic alignment layers(36, 42) are disposed on a surface of a liquid crystal layer side of thepair of the substrates, average pre-tilt angle θ of liquid crystalmolecule 50 a of the liquid crystal layer is θ>20 degrees, twist angle φof the liquid crystal molecule (50 a) of the liquid crystal layer, cellgap d, and helical pitch P of the liquid crystal molecule of the liquidcrystal layer satisfy the Relationship RELATIONSHIP 2 of(0.8/360)φ<d/P<(1.6/360)φ.

[0020] In order to avoid inferior alignment caused by the weak alignmentuniformity of the inorganic alignment layer in a liquid crystal deviceusing the inorganic alignment layer, the inventors examined a feature ofthe liquid crystal material such as the “helical pitch” after variousexperiments and research, and they discovered that inferior alignmentcan be prevented in the liquid crystal device which uses an inorganicalignment layer by setting the ratio between the cell gap of the liquidcrystal device and the helical pitch of the liquid crystal layer in apredetermined range of values. By doing this, a liquid crystal devicecan be realized with no inferior display characteristics such as lightleakage due to disclination and reduced contrast. The helical pitchbeing described here is the length of the liquid crystal layercorresponding to 360 degrees of unidirectional rotation of the majoraxis of liquid crystal molecules in a liquid crystal layer underconditions that the alignment uniformity is not given. Reasons fordetermining the range of d/P ratio between cell gap d and helical pitchP is explained with reference to experimental results.

[0021] According to data from experiments by the inventors of thepresent invention, as mentioned above, the d/P ratio between cell gap dand helical pitch P can be generalized in two different formulae such asthe above Relationships RELATIONSHIP 1 and RELATIONSHIP 2 according tothe two different ranges of the average pre-tilt angle θ of liquidcrystal molecules in a liquid crystal layer such as 5 degrees≦θ≦20degrees and θ>20 degrees. In the case of the inorganic alignment layer,the columnar structure which forms the alignment layer sometimes becomesuneven corresponding to a factor such as the surface shape of thesubstrate when forming the alignment layer, particularly in an obliqueevaporation method. Thus, according to such conditions, a phrase such as“average pre-tilt angle” is used herein because it is anticipates thatthe pre-tilt angle will differ according to the position on thesubstrate, and RELATIONSHIP 1 and RELATIONSHIP 2 may preferably beselected according to the pre-tilt angle which is determined as anaverage tilt-angle of the entire substrate.

[0022] In order to control the pre-tilt angle on an inorganic alignmentlayer, various methods can be employed. Typically, a pre-tilt angle of 5degrees≦θ≦20 degrees can be obtained relatively easily with the formingmethod of the alignment layer by forming an inorganic evaporation layerby evaporation of inorganic material onto the substrateunidirectionally, by evaporating in a vacuum condition for a second timefrom a different angle inside the substrate, and by forming anotherinorganic evaporation layer on the inorganic evaporation layer. In orderto describe a structure of the alignment layer, the inclinationdirection of the columnar structure of an inorganic material which ismade of two layers of an oblique evaporation layer having a columnarstructure of inorganic material slanting in one direction to form bothoblique evaporation layers can realize a pre-tilt angle such as 5degrees≦θ≦20 degrees as long as it is an alignment layer in whichazimuth angle directions inside the substrate plane are different.

[0023] Also, in contrast to the above evaporations performed twice, apre-tilt angle such as θ>20 degrees can be relatively easily obtained ifthe alignment layer is formed once by evaporation. In order to describea structure of the alignment layer, a pre-tilt angle such as θ>20degrees can be realized as long as the alignment layer is made of acolumnar structure of an oblique evaporation layer made of inorganicmaterial slanting unidirectionally.

[0024] For specific materials for the inorganic alignment layer, siliconoxide (SiO), Titanium oxide (TiO₂), Magnesium fluoride (MgF) can beused, and SiO is used most commonly.

[0025] A projection display device of the present invention is providedwith any of the liquid crystal devices of the present invention, and aprojection display device of the present invention is characterized incomprising a light source, the liquid crystal device which modulates thelight emitted from the light source and a magnifying projection opticalsystem which magnifies the light modulated by the liquid crystal deviceand projects the light onto a projection screen.

[0026] According to this construction, by using a liquid crystal deviceof the present invention, a projection display device with no lowcontrast due to inferior alignment of the liquid crystal can be realizedwith a high quality display.

[0027] Also, various experiments have been performed and the result ofthe experiments have been evaluated by the inventors of the presentinvention so as to prevent the occurrence or inferior alignment layerdue to a defective area of evaporation of inorganic material generatedin or near the gap section of the underlayer of alignment layer formedby an inorganic oblique evaporation layer. The reason is that theevaporation is hardly possible in the area shaded by the gap section onthe surface of the underlayer of the alignment layer; thus, such areabecomes a evaporation defect area when an element substrate on which aplurality of wiring and a plurality of insulating layers are formed isfixed at a certain angle and then forming an alignment layer byunidirectional evaporation of an inorganic material.

[0028] Furthermore, after the various experiments and the evaluation ofthe result of the experiments, the inventors of the present inventiondiscovered that it is desirable to alter the azimuth angle direction ofthe oblique evaporation of which the direction is at least along thesurface inside the surface of the substrate when the underlayer of theinorganic alignment layer made of an inorganic oblique evaporation layerformed on the substrate has the gap section on the surface of thesubstrate, and to perform the oblique evaporation two or more times. Inmore detail, the inventors discovered a method such as forming the firstinorganic oblique evaporation layer by the oblique evaporation ofinorganic material unidirectionally onto the substrate on which surfacethe underlayer having the gap section is formed, and forming the secondinorganic oblique evaporation layer in an area close to the gap sectionand on the first inorganic oblique evaporation layer by the obliqueevaporation of inorganic material from a direction in which the azimuthangle direction inside the plane of the substrate is at least differentfrom the direction of the oblique evaporation of inorganic material inthe forming step of the first oblique evaporation layer. According tothis method, the first and the second inorganic oblique evaporationlayers are formed by the columnar structure of the slant inorganicmaterial. The slanting direction of the columnar structure of inorganicmaterial which forms the first inorganic oblique evaporation layer, andthe slanting direction of the columnar structure of inorganic materialwhich forms the second inorganic oblique evaporation layer are differentin that the azimuth angle directions along the direction inside thesurface of the substrate are different. In a liquid crystal device inwhich the inorganic alignment layer having such first and secondinorganic oblique evaporation layers are formed, the above problems aresolved.

[0029] In addition, in the case of forming an alignment layer for aliquid crystal panel by an oblique evaporation layer made of SiO, themethod in which the oblique evaporation is performed twice is known fromthe disclosure in IEEE Trans. Electron. Devices, Vol. ED-24(7),805(1977) by M. R. Johnson and P. A. Penz. However, the liquid crystaldevice of this disclosure is a single matrix type direct-view liquidcrystal panel. This liquid crystal device is not as small as a liquidcrystal device for a projection light source in a liquid crystalprojector of this invention, and this liquid crystal device is not anactive matrix type liquid crystal panel in which the pixel pitch ofpixel electrodes is as fine as 20 μm and the underlayer of the alignmentlayer has a gap section due to the scanning lines and the data lines.

[0030] Also, an object of performing the oblique evaporation twice inthe above conventional art was to make the pre-tilt angle of the liquidcrystal molecules less than 20 degreesin a simple matrix typedirect-view liquid crystal panel. Thus, in the case in which the gap onthe surface of the underlayer of the inorganic alignment layer is large,preventing the occurrence of defect evaporation areas of inorganicmaterial in areas close to the gap section was not treated previously.

[0031] In order to achieve the above objects, in a liquid crystal deviceof present invention, a liquid crystal layer is disposed between a pairof substrates facing each other; inorganic alignment layers are disposedon a surface of a liquid crystal layer side of the pair of thesubstrates, and an underlayer of at least one of the inorganic alignmentlayers have a gap section. Additionally, the inorganic alignment layersformed on the underlayer having the gap section comprise a firstinorganic oblique evaporation layer and a second inorganic obliqueevaporation layer formed in an area close the gap section and on thefirst inorganic oblique evaporation layer. The first and the secondinorganic oblique evaporation layers are made of slanted columnarstructures of inorganic material. Azimuth angle directions of theslanting direction of the columnar structure of an inorganic materialforming both the first and the second oblique evaporation layers aredifferent inside the plane of the substrate.

[0032] According to the liquid crystal device with such a construction,inorganic alignment layers formed on the underlayer having the above gapsection comprises the first inorganic oblique evaporation layer formedby a columnar structure of slant inorganic material and the secondinorganic oblique evaporation layer, and the slant direction ofinclination of the columnar structure of inorganic material of thesecond inorganic oblique evaporation layer is different from the slantdirection of the columnar structure of the first inorganic obliqueevaporation layer, at least with regard to the azimuth angle direction.Also, because the second inorganic oblique evaporation layer is formedin an area close to the above gap section, even if a pixel pitch as fineas 20 μm or less is formed, the occurrence of uneven evaporation ofinorganic material or insufficient evaporation in areas close to theabove gap section can be reduced. Accordingly, even if the pixel pitchis as fine as 20 μm or less, the inorganic alignment layer formed on theunderlayer having a gap section on the surface of underlayer can be freefrom defects, the defective alignment of liquid crystals due to adefective alignment layer can be prevented, and the occurrence ofdefective display, such as lowered contrast, can be prevented. Sucheffects can also be obtained even if the pixel pitch is as fine as 15 μmor less.

[0033] Also, in a liquid crystal device in this invention, a liquidcrystal layer is disposed between a pair of substrates facing eachother, a plurality of pixel electrode is disposed in a matrix, aplurality of switching devices which drive the plurality of the pixelelectrodes, and a plurality of data lines and a plurality of scanninglines connected respectively to the plurality of the switching devicesare provided on either one of the two substrates. Facing electrodes areprovided on the other substrate, inorganic alignment layers are providedrespectively on the surface of the liquid crystal side of the twosubstrates, and an underlayer of at least one of the inorganic alignmentlayer on the side of which the switching device is provided has a gapsection on its surface. Inorganic alignment layers formed on theunderlayer having gap sections comprising a first inorganic obliqueevaporation layer and a second inorganic oblique evaporation layerformed in an area close to the gap section and on the first inorganicoblique evaporation layer. The first and the second inorganic obliqueevaporation layers are made of an slant columnar structure of inorganicmaterial. Azimuth angle directions of the direction of inclination ofthe columnar structure of inorganic material constructing both the firstand the second oblique evaporation layers are different along the insideplane direction of the substrate.

[0034] In such a liquid crystal device, an inorganic alignment layerformed on the underlayer having the above gap section comprises thefirst inorganic oblique evaporation layer formed by a columnar structureof slant inorganic material and the second inorganic oblique evaporationlayer, and the direction of inclination of the columnar structure of theinorganic material of the second inorganic oblique evaporation layer isdifferent from the direction of inclination of the columnar structure ofthe first inorganic oblique evaporation layer at least with regard tothe azimuth angle direction. Additionally, because this second inorganicoblique evaporation layer is formed in an area close to the above gapsection, the occurrence of uneven evaporation of inorganic material orinsufficient evaporation in areas close to the above gap section can bereduced. Accordingly, even if the pixel pitch is as fine as 20 μm orless, an inorganic alignment layer formed on the underlayer having a gapsection on the surface of the underlayer can be free from defects, thedefective alignment of liquid crystals due to the defective alignmentlayer can be prevented, and the occurrence of defective display, such aslowered contrast can be prevented. Such effects can also be obtainedeven if the pixel pitch is as fine as 15 μm or less.

[0035] In addition, in this invention, components on the substrate onwhich switching devices are provided for constructing the pixels arescanning lines (gates) and data lines, the switching devices connectedto these lines, pixel electrode, and supplementary capacity(accumulation capacity) and the like. On the substrate on which thefacing electrodes are provided, constituting parts of pixels are shadinglayers (black matrix), facing electrodes and the like. Pixel pitch is,for example, the pixel electrode pitch or the like.

[0036] Also, in a liquid crystal device with any structure of presentinvention, the inclination direction of a columnar structure of aninorganic material forming the above first inorganic oblique evaporationlayer and the direction of the inclination of the columnar structure ofthe inorganic material forming the above second inorganic obliqueevaporation layer can differ by 90 degrees with regard to the azimuthangle direction. In the case of an ordinary active matrix type liquidcrystal device, data lines and scanning lines are crossing in nearly anorthogonal manner such as in a matrix, and an alignment layer can bedisposed securely in an area close to gap sections crossing each otherby twice performing evaporation from the direction of which azimuthangle direction differs by 90 degrees.

[0037] Also, in a liquid crystal device with any structure of thepresent invention, the thickness of the first inorganic obliqueevaporation layer should preferably be 5 nm to 16 nm, and the thicknessof the second inorganic oblique evaporation layer should preferably be10 nm to 40 nm.

[0038] If the thickness of the first inorganic oblique evaporation layeris less than 5 nm, the pre-tilt angle is not arranged for the liquidcrystal molecule, and such a condition may cause disclination. If thethickness is larger than 16 nm, the effect which should be obtained bythe second inorganic oblique evaporation layer cannot be obtainedsufficiently; thus, the pre-tilt angle of liquid crystal moleculesbecomes larger than 20 degrees.

[0039] If the thickness of the second inorganic oblique evaporationlayer is less than 10 nm, the effect that the columnar structure of thissecond inorganic oblique evaporation layer fills the gap of the columnarstructure of inorganic material forming the first inorganic obliqueevaporation layer is insufficient; thus the pre-tilt angle of the liquidcrystal molecules becomes larger than 20 degrees. If the thickness ofthe second inorganic oblique evaporation layer is larger than 40 nm, thegap of the columnar structure of the inorganic material forming thefirst inorganic oblique evaporation layer is filled; thus, the pre-tiltangle is not disposed on the liquid crystal molecule, and thereforethere is no pre-tilt in alignment.

[0040] Also, in a liquid crystal device with any construction of thepresent invention, the average pre-tilt angle of the liquid crystals ofthe above liquid crystal layer should preferably be 5 degrees to 15degrees.

[0041] Also, in a liquid crystal device with any construction of thepresent invention, an oblique evaporation layer made of silicon oxidecan be used for the above inorganic alignment layer.

[0042] In the manufacturing method for the substrate a for liquidcrystal device by oblique evaporation of inorganic material on anunderlayer having a gap section on the surface formed on the substrateso as to form the inorganic alignment layers, a manufacturing method fora substrate for a liquid crystal device of the present invention ischaracterized in comprising a first oblique evaporation step byunidirectional oblique evaporation of the inorganic material on thesubstrate on which the underlayer having the gap section is formed onthe surface of the substrate so as to form the first inorganic obliqueevaporation layer, a second oblique evaporation step by obliqueevaporation of inorganic material from at least a different azimuthangle inside the substrate from the oblique evaporation direction of theinorganic material in the first oblique evaporation step so as to formthe second oblique evaporation layer in an area close to the gap sectionand on the first inorganic oblique evaporation layer.

[0043] According to such a manufacturing method for a substrate for aliquid crystal device, the first and the second oblique evaporationsteps are arranged, the oblique evaporation direction of the inorganicmaterial in the first oblique evaporation step and the obliqueevaporation direction of inorganic material in the second obliqueevaporation step are different with regard to at least the azimuth angledirection along an inside surface direction of the substrate. Therefore,even if there is such an area in which inorganic material is not vacuumdeposited in the first oblique evaporation step, inorganic material canbe vacuum deposited to such area in the second oblique evaporation step.In the first oblique evaporation step, an area close to the gap sectionmay be in the shadow; thus, there may be an area in which the firstinorganic oblique evaporation layer is not formed. In the second obliqueevaporation step, by performing the oblique evaporation of inorganicmaterial at a different azimuth angle direction from the azimuth angledirection employed in the first oblique evaporation step, the secondinorganic oblique evaporation layer can be formed by performing theevaporation of inorganic material onto the area where an inorganicoblique evaporation layer is not formed due to the shadow by the gapsection in the first oblique evaporation step. Also, in this secondoblique evaporation step, the second inorganic oblique evaporation layeris formed not only in an are close to the gap section, but also on thefirst inorganic oblique evaporation layer on at least both sides of thegap section. According to the manufacturing method for a substrate for aliquid crystal device with such a construction, a substrate for a liquidcrystal device which can be provided for a liquid crystal device withany construction of the present invention can be manufactured.

[0044] Also, in the manufacturing method for a substrate for a liquidcrystal device with the above construction in the present invention, thefirst inorganic oblique evaporation layer can be preferably formed, thesecond inorganic oblique evaporation layer can be preferably formed inan area close to the gap section and on the first inorganic obliqueevaporation layer; thus, the direction of oblique evaporation ofinorganic material in the first oblique evaporation step and thedirection of oblique evaporation of inorganic material in the secondoblique evaporation step should preferably differ by approximately orexactly 90 degrees with regard to the azimuth angle direction. In thecase of an ordinary active matrix type liquid crystal device, data linesand scanning lines cross nearly orthogonally in a matrix; thus, analignment layer can be reliably formed in an area close to each gapsection crossing each other by performing evaporation twice fromdifferent azimuth angle directions.

[0045] Also, in a manufacturing method for a substrate for a liquidcrystal device with any construction of the present invention,deposition angle of inorganic material of the first oblique evaporationfrom the substrate should preferably be 5 degrees to 10 degrees, and thedeposition angle of inorganic material of the second oblique evaporationfrom the substrate should preferably be 25 degrees to 30 degrees.

[0046] If the deposition angle of the oblique evaporation direction inthe first oblique evaporation from the substrate is less than 5 degrees,the density of the columnar structure formed is too low; thus thealignment direction of the liquid crystal molecules becomes unstable,and the alignment uniformity inside the plane along the inside planedirection of the substrate is lost.

[0047] If the deposition angle of oblique evaporation direction from thesubstrate is larger than 10 degrees, the density of the columnarstructure formed becomes high, and the effect that the gap of thecolumnar structure of the first inorganic oblique evaporation layer isfilled by the columnar structure of the second inorganic obliqueevaporation layer can hardly be obtained; thus, as a result, the areawhere there is no pre-tilt in the alignment of liquid crystal moleculeexpands when manufacturing the liquid crystal device with thissubstrate.

[0048] If the deposition angle of oblique evaporation direction from thesubstrate in the second oblique evaporation step is less than 25degrees, the effect that the gap of the columnar structure of the firstinorganic oblique evaporation layer is filled by the columnar structureof the second inorganic oblique evaporation layer can hardly beobtained. If the deposition angle of the oblique evaporation from thesubstrate is larger than 30 degrees, anisotropy in the formed layer islost; thus, the function of aligning the liquid crystal molecule islost.

[0049] Also, in a manufacturing method for a substrate for a liquidcrystal device with any construction of the present invention, in eitherone of the first oblique evaporation step or the second obliqueevaporation step, the oblique evaporation direction should preferably beselected according to the construction and the disposition of the gapsection formed on the surface of the underlayer in that the effect thatthe inorganic oblique evaporation layer can be formed separately byperforming the oblique evaporation twice can be enhanced in the obliqueevaporation of the inorganic material. For example, in a case in whichthere are high gap sections and low gap sections on the surface of theunderlayer, oblique evaporation of inorganic material should preferablybe performed from the direction of the low gap section in the firstoblique evaporation step, and oblique evaporation of inorganic materialshould preferably be performed from a direction such that the azimuthangle direction along the inside plane direction of the substrate is atleast different from the oblique evaporation direction of inorganicmaterial in the first oblique evaporation step in the second obliqueevaporation step. As mentioned above, the first oblique evaporation stepis performed on the surface of the substrate at a narrow angle, and thesecond oblique evaporation step is performed on the surface of thesubstrate at a wide angle. In such a case, the shaded part which is ashadow in the first oblique evaporation step, such as no-inorganic-layerarea, becomes small; thus, the alignment layer is formed more reliably.

[0050] Also, the reason the oblique evaporation should be performedaccording to above method is understandable according to following.

[0051] As shown in FIG. 16, the Relationship among θ as an evaporationangle of silicon oxide, ΔZ as a height of the gap between wiring 9 c andsurface of substrate 10 a, ΔL as a width of a non-alignment-layer areawhere an inorganic oblique evaporation layer is not formed due to theshade of the gap was researched under conditions that the wiring 9 c isformed on the surface of the substrate 10 d, and the oblique evaporationof silicon oxide (SiO) is performed on the surface of the substrate 10 dfrom a unidirectional direction S. The result of the above research isshown in FIG. 17. The oblique evaporation direction S is an orthogonaldirection to the wiring 9 c.

[0052] As shown in FIG. 17, ΔL as a width of a non-alignment-layer areawhere an inorganic oblique evaporation layer is not formed increasesaccording to ΔZ as the height of the gap without regard to the obliqueevaporation angle S. Therefore, it is understood from above result thatΔL as a width of a non-alignment-layer area where an inorganic obliqueevaporation layer is not formed can be decreased by performing theoblique evaporation of inorganic material from the direction of the lowgap section in the first oblique evaporation step; thus, the alignmentlayer can be formed as large as possible in the first obliqueevaporation step, and the area which should be compensated for in thesecond oblique evaporation step can be lessened.

[0053] Also, in a manufacturing method for a substrate for a liquidcrystal device with any construction in the present invention, of thethickness of inorganic oblique evaporation layer formed in the firstoblique evaporation step should preferably be 5 nm to 16 nm, and thethickness of inorganic oblique evaporation layer formed in the secondoblique evaporation step should preferably be 10 nm to 40 nm.

[0054] If the thickness of the first inorganic oblique evaporation layeris less than 5 nm, a pre-tilt angle is not provided to the liquidcrystal molecules, and such a condition may cause disclination. If thethickness is larger than 16 nm, the effect which should be obtained bythe second inorganic oblique evaporation layer cannot be obtainedsufficiently; thus, the pre-tilt angle of liquid crystal moleculesbecomes larger than 20 degrees.

[0055] If the thickness of the second inorganic oblique evaporationlayer is less than 10 nm, the effect that the columnar structure of thissecond inorganic oblique evaporation layer fills the gap of the columnarstructure of inorganic material organizing the first inorganic obliqueevaporation layer is insufficient; thus the pre-tilt angle of the liquidcrystal molecule becomes larger than 20 degrees. If the thickness of thesecond inorganic oblique evaporation layer is larger than 40 nm, the gapof the columnar structure of inorganic material organizing the firstinorganic oblique evaporation layer is filled; thus, the pre-tilt angleis not provided to the liquid crystal molecules, therefore there is nopre-tilt in alignment.

[0056] Also, in a manufacturing method for a substrate for a liquidcrystal device with any construction in the present invention, siliconoxide can be preferably used as the above inorganic material.

[0057] A projection display device of the present invention is providedwith any of the liquid crystal devices of the present invention, and aprojection display device of the present invention is characterized incomprising a light source, the liquid crystal device which modulates thelight emitted from the light source, and a magnifying projection opticalsystem which magnifies the light modulated by the liquid crystal deviceand projects the light on a projection plane.

[0058] According to the projection display device with this constructionin the present invention, by using the liquid crystal device of any ofthe present invention, a projection display device having high displayquality with no low contrast due to inferior alignment of liquidcrystals can be realized.

BRIEF DESCRIPTION OF THE DRAWING

[0059]FIG. 1 is a similar circuit showing various elements and wiringsprovided in a plurality of pixels in a matrix which forms the picturedisplay area of liquid crystal devices in the first and the thirdembodiments of the present invention.

[0060]FIG. 2 is a plan view showing a plurality of a group of pixelsneighboring each other on a TFT array substrate of a liquid crystaldevice.

[0061]FIG. 3 is a cross section along line A-A′ in FIG. 2.

[0062]FIG. 4 is a cross section along line C-C′ in FIG. 2.

[0063]FIG. 5 is a cross section showing the first oblique evaporationlayer of a liquid crystal device and an area close along the obliqueevaporation direction S_(A).

[0064]FIG. 6 is a cross section showing the second oblique evaporationlayer in an area close to the gap section of the liquid crystal deviceand an area close along the oblique evaporation direction S_(B).

[0065]FIG. 7 is a drawing which shows the oblique evaporation directionof the side on which the TFT array substrate is located.

[0066]FIG. 8 is a drawing showing the oblique evaporation direction ofthe side on which facing substrates are formed.

[0067]FIG. 9 is a plan view showing a TFT array substrate of a liquidcrystal device of the embodiments and the various elements formed on thesubstrate viewed from the side of the facing substrates.

[0068]FIG. 10 is a cross section along H-H′ line in FIG. 9.

[0069]FIG. 11 is a drawing which shows a projection a sample displaydevice of an electronic apparatus which uses a liquid crystal device.

[0070] FIGS. 12 to 15 show manufacturing processes for the liquidcrystal device according to each step of a manufacturing method.

[0071]FIG. 16 is a view for examining the Relationship among θ as anevaporation angle of silicon oxide, ΔZ as a height of the gap, and ΔL asa width of the non-alignment-layer area where an inorganic obliqueevaporation layer is not formed.

[0072]FIG. 17 is a view showing the Relationship among θ as anevaporation angle of silicon oxide, ΔZ as a height of the gap, and ΔL asa width of a non-alignment-layer area where an inorganic obliqueevaporation layer is not formed.

[0073]FIG. 18 is a cross section showing an example of a conventionalliquid crystal device.

[0074]FIG. 19 is a view showing an area close to the gap section of thesubstrate for the conventional liquid crystal device on which analignment layer made of inorganic slant vacuum evaporated layer isformed.

DETAILED DESCRIPTION OF THE INVENTION

[0075] First Embodiment

[0076] The structure of a liquid crystal device in a first embodiment ofthe present invention will be explained with reference to FIGS. 1 to 8.The liquid crystal device in this embodiment of the present invention isan example of an active matrix type liquid crystal device of which is tobe used as a light valve of a projection liquid crystal display device.

[0077]FIG. 1 is a drawing showing an equivalent circuit such as variouselements and wirings provided in a plurality of pixels in a matrix whichforms the picture display area of the liquid crystal device. FIG. 2 is aplan view showing a plurality of a group of pixels neighboring eachother on the TFT on which data lines, scanning lines, and pixelelectrodes are formed. FIG. 3 is a cross section along line A-A′ in FIG.2, and FIG. 4 is a cross section along line C-C′ in FIG. 2.

[0078] In FIGS. 3 and 4, the reduced scale is different based on eachlayer and each element for the purpose of enabling each layer and eachelement to be visible in the drawings. Also, in FIG. 3, the alignmentcondition of the liquid crystals of each liquid crystal layer isgraphically shown only as an area surrounded by double-dotted line 61;thus, the alignment condition of liquid crystal molecules of the rest ofsuch areas are omitted in the drawing.

[0079] As shown in FIG. 1, on a plurality of pixels formed in a matrixand forming the pixel display area of a liquid crystal device of thepresent embodiment, a plurality of pixel electrodes 9 a and a pluralityof TFTs 30 for pixel switching for controlling the pixel electrodes 9 aare formed in a matrix, and data lines 6 a supplying picture signals areconnected electrically to the source areas of the TFTs 30.

[0080] Pixel signals S1, S2, to Sn which are to be written in data line6 a may be supplied in sequential order of lines, also pixel signal 5may be supplied per group made of data lines 6 a neighboring each other.Also, the scanning line 3 a is connected electrically to the gate of TFT30, scanning signals G1 and G2 to Gm are impressed according to thescanning line 3 a in pulses in this sequential order of line at apredetermined timing. The pixel electrode 9 a is connected electricallyto the drain area of pixel switching TFT 30, picture signals S1 and S2to Sn supplied from the data line 6 a is written at a predeterminedtiming by opening the TFT 30 as a switching element only for apredetermined period of time. Picture signals S1 and S2 to Sn which werewritten via pixel electrodes 9 a with a predetermined level are retainedbetween facing electrodes formed on the facing substrates for apredetermined period of time. Facing electrodes and facing substratesare explained in detail later. Here, accumulating capacity 70 is addedin a row with a liquid crystal capacity formed between the pixelelectrodes 9 a and the facing electrodes so as to prevent the leaking ofthe retained picture signal. For a method of forming the accumulatingcapacity 70, capacity line 3 b which is a wiring for forming thecapacity between semiconductor layers is provided. Also, instead ofproviding the capacity line 3 b, the capacity may be formed between thepixel electrode 9 a and the scanning line 3 a which is in the previousstage.

[0081] Next, according to FIG. 2, plan construction inside the pixelarea (picture display area) of TFT array substrate of the liquid crystaldevice of the present embodiment is explained in detail.

[0082] As shown in FIG. 2, on the TFT array substrate of the liquidcrystal device, a plurality of transparent pixel electrodes 9 a areprovided in a matrix, and the outline of the pixel electrode is shown bya dotted-line 9 a′. Data line 6 a, scanning line 3 a and capacity line 3b are provided along the horizontal border and vertical border of pixelelectrode 9 a. Data line 6 a connected electrically to the source areadescribed below of any one of the semiconductor layers la made ofpolysilicon via a contact hole 5, and the pixel electrode 9 a isconnected electrically to any one of the drain area of the semiconductorlayer la via a contact hole 8. The pitch of the pixel electrode issupposed to be 20 μm or lower, and more preferably, the pitch of thepixel electrode is supposed to be 15 μm or lower. Also, the scanningline 3 a is disposed so as to face towards a channel area as shown in anangular perspective view in FIG. 2 (explained later) among thesemiconductor layer 1 a; thus, the scanning line 3 a itself functions asa gate electrode.

[0083] The capacity line 3 b has a main line section extending almostlinearly along the scanning line 3 a (in other words a first area formedalong the scanning line 3 a in plan view) and a projection section (inother words, a second area extending along the data line 6 a in planview) projected to the side of the previous stage (upward direction inFIG. 2) along the data line 6 a from the crossing point with the dataline 6 a. Additionally, in the area shown by angular perspective in FIG.2, a plurality of first shading layers 111 are provided. Morespecifically, the first shading layer 111 is provided in a position forcovering the TFT including the channel area of the semiconductor layer 1a in the pixel area viewed from the side on which the TFT arraysubstrate is provided. Furthermore, the first shading layer 111 has amain line section extending linearly along the scanning line 3 a so asto face towards the main line section of the capacity line 3 b andprojection section which is projecting to the latter stage (downwarddirection in FIG. 2) neighboring along the data line 6 a from thecrossing point with the data line 6 a. The tip of the downwardprojection section in each stage (each pixel line) of the first shadinglayer 111 is overlapping with the tip of the upward projection sectionof the capacity line 3 b in the next stage under the data line 6 a. Inthis overlapping point, a contact hole 13 which connects the firstshading layer 111 and the capacity line 3 b electrically andrespectively is provided. That is, in the present embodiment, the firstshading layer 111 is connected to the capacity line 3 b of the previousor latter stage electrically by a contact hole 13.

[0084] Next, regarding the cross sectional structure, as shown in FIG.3, the liquid crystal device of present embodiment has a pair oftransparent substrate, the TFT array substrate 10 as one side of thesubstrates and the facing substrate 20 as the other substrate so as tobe disposed to face the TFT array substrate 10 are provided. On TFTarray substrate 10, pixel electrode 9 a made of a transparent conductivelayer such as indium tin oxide (hereinafter called ITO) as an example isprovided, and TFT 30 for switching to control each pixel electrode 9 ais provided in position neighboring each pixel electrode 9 a on the TFTarray substrate 10. TFT 30 has an LDD (lightly doped drain)construction, and TFT array substrate 10 is provided with a scanningline 3 a, a channel area 1 a′ of the semiconductor layer la on which achannel is formed by the electric field from the scanning line 3 a, aninsulating layer 2 which insulates the scanning line 3 a from thesemiconductor layer 1 a, a data line 6 a, a low density source area 1 bof the semiconductor layer 1 a, a low density drain area 1 c of thesemiconductor layer 1 a, high density source area 1 d of thesemiconductor layer 1 a, and high density drain area 1 e of thesemiconductor layer 1 a.

[0085] Also, on the scanning line 3 a and on the TFT array substrate 10including the insulating layer 2, the second insulating layer 4 on whicha contact hole 5 communicating with the high density source area 1 d anda contact hole 8 communicating with the high density drain area 1 e arerespectively formed is formed. That is, the data line 6 a is connectedto the high density source area 1 d electrically via the contact hole 5penetrating through the second insulating layer 4. Additionally, on thedata line 6 a and on the second insulating layer 4, a third insulatinglayer 7 on which the contact hole 8 communicating with the high densitydrain area le is formed. That is, the high density drain area 1 e isconnected to the pixel electrode 9 a electrically via the contact hole 8penetrating through the second insulating layer 4 and the thirdinsulating layer 7. The third insulating layer 7 and the pixel electrode9 a are the underlayer of the inorganic alignment layer 36 which ismentioned later, the surface of the underlayer has the gap section 80made by the scanning line 3 a and the capacity line 3 b. The height Z ofthe gap section 80 made on the surface of the underlayer is 200 μm to600 μm under condition that the pixel pitch is 15 μm or the like.

[0086] Also, the accumulating capacity 70 is made in such a way that theinsulating layer 2 as a gate insulating layer is extended from thefacing position towards the gate electrode made of a part of thescanning line 3 a so as to be a dielectric substance layer, thesemiconductor layer 1 a is extended so as to be the first accumulatingcapacity electrode 1 f, and furthermore a part of the capacity line 3 afacing towards the accumulating capacity electrode 1 f is made to be asecond accumulating capacity electrode. More specifically, the highdensity drain area 1 e of the semiconductor layer 1 a is extendedbeneath the data line 6 a and the scanning line 3 a, also the highdensity drain area 1 e of the semiconductor layer 1 a is disposed facingtowards the capacity line 3 b which is extending along the data line 6 aand the scanning line 3 a via the insulating layer 2; thus, the firstaccumulating capacity electrode 1 f is made.

[0087] Additionally, in the accumulating capacity 70, as understood fromFIGS. 2 and 3, the accumulating capacity of the first shading layer 111increases by disposing the first shading layer 111 as a thirdaccumulating capacity electrode at the opposite side of the capacityline 3 b as the second accumulating capacity electrode so as to facetowards the first accumulating capacity electrode 1 f via the firstinsulating layer 12. This description is supported by the accumulatingcapacity 70 shown in the right-hand side of FIG. 3.

[0088] Also in the position which corresponds to each pixel switchingTFT 30 on the surface of the TFT array substrate 10, the first shadinglayer 111 made of a metal layer M1 and a barrier layer B1 is provided.Between the first shading layer 111 and the TFT 30, a first insulatinglayer 12 made of highly insulating glass, silicon oxide layer, siliconnitride layer is provided. Additionally, the first insulating layer 12is formed on the entire surface of the TFT array substrate 10, and inorder to solve the gap of the first shading layer 111 pattern, thesurface of the first insulating layer 12 is ground and aflattening-treatment is performed.

[0089] Also, as shown in FIGS. 2 and 3, in addition to the first shadinglayer 111 being provided on the TFT array substrate 10, the firstshading layer 111 is connected to the capacity line 3 b of the previousor latter stage electrically via the contact hole 13. Accordingly, ascompared to the case in which each first shading layer 111 is connectedto the capacity line of the latter stage electrically, the gap on thearea which is the rest of the area on which the capacity line 3 b andthe first shading layer 111 are formed to overlap the data line 6 aalong the edge of the opening section of the pixel area need not beincreased. If the gap along the edge of the opening section of the pixelsection is small, disclination of the liquid crystal (inferioralignment), generated according to the gap, decreases, and it ispossible to open the mouth opening section of the pixel section.

[0090] On the other hand, on the facing substrate 20, data line 6 a onthe TFT array substrate 10, the scanning line 3 a, the area facing thearea on which the pixel switching TFT 30 is formed, in other words, anarea which is the rest of the mouth opening section of each pixelsection, the second shading layer 23 is provided. Furthermore, on thefacing substrate 20 including the second shading layer 23, a facingelectrode 21 (common electrode) is provided on the entire surfacethereof. The facing electrode 21 is made of a transparent conductivelayer such as an ITO layer or the like as well as the pixel electrode 9a of the TFT array substrate 10. Because of the second shading layer 23,incident light from the side on which the facing substrates 20 areprovided does not enter the channel area 1 a′ of the semiconductor layer1 a of the pixel switching TFT 30, the low density source area 1 b, andthe low density drain area 1 c.

[0091] Also, in the case of the present embodiment, inorganic alignmentlayer 36 formed by oblique evaporation of an inorganic material isprovided on the underlayer having the gap section 80 on the surfacessuch as the third insulating layer 7 which is an area on which the pixelswitching TFT 30 of the TFT array substrate, the data line 6 a, and thescanning line 3 a are formed, such as the pixel electrode 9 a. Morespecifically, this gap section 80 is a gap made by a convex section 81of the pixel electrode 9 a formed on the capacity line 3 b and a concavesection 82 of the pixel electrode 9 near this convex section 81. Thisinorganic alignment layer 36 comprises a first inorganic obliqueevaporation layer 36 a and a second inorganic oblique evaporation layer36 b.

[0092] The first inorganic oblique evaporation layer 36 a is formed inthe first oblique evaporation step by fixing TFT array substrate 10 onwhich the first shading layer 111, the first insulating layer 12, TFT30, the second insulating layer 4, the third insulating layer 7, and thepixel electrode 9 a are formed at a certain angle, by performing theoblique evaporation of inorganic material such as silicon oxideunidirectionally, and by growing the columnar structure of inorganicmaterial disposed on the substrate at a predetermined angle.Additionally, reference symbol S_(A) in FIGS. 2 and 4 indicates thedirection of oblique evaporation of inorganic material in forming thefirst inorganic oblique evaporation layer 36 in the first obliqueevaporation step. This oblique evaporation direction S_(A) is orthogonalto the scanning line 3 a and the capacity line 3 b, and it is an upwarddirection in FIG. 2. Also, the oblique evaporation direction S_(A)should preferably be that the deposition angle θ₁ made by TFT arraysubstrate 10 is 5 degrees to 10 degrees as shown in FIG. 7.

[0093] The first inorganic oblique evaporation layer 36 a is formed inarea 80 b where an area 80 a close to the gap section 80 as a shade dueto the gap section 80 being excluded. This first inorganic obliqueevaporation layer 36 a is formed on a small portion of the area 80 aclose to the gap section 80. This is because that evaporation ofinorganic material can hardly be performed if the oblique evaporation ofthe inorganic material is performed in the above oblique evaporationdirection S_(A), the area 80 a close to the gap section 80 such as aramp area and in proximity thereto on the side along the obliqueevaporation direction S_(A) of the convex section 81 becomes a shade ofthe gap section 80.

[0094] As shown in FIGS. 2 and 7, the second inorganic obliqueevaporation layer 36 b is formed in a second oblique evaporation stepsuch as by performing the oblique evaporation of inorganic material froma direction S_(B), which is different from the oblique evaporationdirection S_(A), of the above first oblique evaporation step regardingazimuth angle direction θ along the inside plane direction of thesubstrate, and by growing the columnar structure disposed in a row at apredetermined angle against the substrate. This oblique evaporationdirection S_(B) is along the scanning line 3 a and the capacity line 3b, and the oblique evaporation direction S_(B) is in a direction fromright-to-left on FIG. 2. The azimuth angle direction between the obliqueevaporation direction S_(B) and the oblique evaporation direction S_(A)should preferably differ by 90 degrees. Also, as shown in FIG. 7, thedeposition angle θ₂ made by the, TFT array substrate 10 shouldpreferably be 25 degrees to 30 degrees.

[0095] This second inorganic oblique evaporation layer 36 b is formed onthe area 80 a close to above gap section 80 where above first inorganicoblique evaporation layer 36 a is not formed. This second inorganicoblique evaporation layer 36 b is formed on the area 80 a close to abovegap section 80 where the first inorganic oblique evaporation layer 36 ais not formed. In the second oblique evaporation step shading in theevaporation may occur depending to the shape and the disposition of thegap section 80 of the surface of the underlayer; thus, the secondinorganic oblique evaporation layer 36 b may not be formed on the entiresurface of the first inorganic oblique evaporation layer 36 a. That is,it is sufficient if the second inorganic oblique evaporation layer 36 bis formed at least on the area 80 a close to the gap section 80 and onthe first inorganic oblique evaporation layer 36 a on both sides of thegap section 80. Accordingly, the inorganic oblique evaporation layer 36is actually a mixture of areas such as the area where only the firstinorganic oblique evaporation layer 36 a is formed, the area where thesecond inorganic oblique evaporation layer 36 b is formed on the firstinorganic oblique evaporation layer 36 a, and the area where only thesecond inorganic oblique evaporation layer 36 b is formed.

[0096]FIG. 5 shows the area where only the first inorganic obliqueevaporation layer 36 a of the liquid crystal device of presentembodiment is formed and is a cross section along the obliqueevaporation direction S_(A) close thereto. FIG. 6 shows the area wherethe first inorganic oblique evaporation layer 36 a formed in the area 80a close to the gap section 80 of the liquid crystal device of presentembodiment is formed, and a cross section along the oblique evaporationdirection S_(B) close thereto. In addition, the cross section of thearea where the second inorganic oblique evaporation layer 36 b is formedon the first inorganic oblique evaporation layer 36 a is omitted in thedrawings. As shown in FIG. 5, the columnar structure of slant inorganicmaterial in the first inorganic oblique evaporation layer 36 a is madesparse, and there are spaces 37 between the neighboring columnarstructures. On the other hand, in FIG. 6, the columnar structure ofslanted inorganic material of the second inorganic oblique evaporationlayer 36 b is made dense and forms grooves 38 on the surface which is onthe side of liquid crystal layer 50. Also, this second inorganic obliqueevaporation layer 36 b is formed at least on the first inorganic obliqueevaporation layer 36 a on both sides of the gap section 80, and thestructure of such an area is as if the spaces 37 among the columnarstructures shown in FIG. 5 were filled with the columnar structure ofthe second inorganic oblique evaporation layer 36 b. Between thedirection of inclination of the columnar structures of inorganicmaterial forming the first inorganic oblique evaporation layer 36 a andthe direction of inclination of the columnar structure of inorganicmaterial forming the second inorganic oblique evaporation layer 36 b, atleast the azimuth angle direction θ along the inside plane direction ofthe above substrate is different, and such difference should preferablybe 90 degrees.

[0097] The thickness of the first inorganic oblique evaporation layer 36a should preferably be 5 nm to 16 nm, and more preferably 8 nm to 10 nm.If the thickness of the first inorganic oblique evaporation layer 36 ais less than 5 nm, the pre-tilt angle θ_(p) is not given to the liquidcrystal molecules 50 a; thus, such a condition may become a cause of thedisclination. If the thickness of the first inorganic obliqueevaporation layer 36 a is larger than 16 nm, the effect of the secondinorganic oblique evaporation layer 36 b becomes insufficient; thus, thepre-tilt angle θ_(p) of the liquid crystal molecules 50 a becomes 20degrees or larger.

[0098] Also, the thickness of the second inorganic oblique evaporationlayer 36 b should preferably be 10 nm to 40 nm. If the thickness of thesecond inorganic oblique evaporation layer 36 b is less than 10 nm, theeffect that the columnar structure of the second inorganic obliqueevaporation layer 36 b fills the spaces 37 of the columnar structure ofinorganic material forming the first inorganic oblique evaporation layer36 a decreases; thus, the pre-tilt angle θ_(p) of the liquid crystalmolecules 50 a becomes larger than 20 degrees. If the thickness of thesecond inorganic oblique evaporation layer 36 b is larger than 40 nm,the spaces 37 of the columnar structure of inorganic material formingthe first inorganic oblique evaporation layer 36 a is filled; thus, thepre-tilt angle is not given to the crystal molecules 50 a, and thealignment condition is such that there is no pre-tilt angle. Because ofthis, the average thickness of the inorganic alignment layer 36 is 16 nmto 22 nm or the like.

[0099] On the other hand, inorganic alignment layer 42 having a similarform to that of the TFT array substrate 10 is provided also on thefacing electrodes 21 of the facing substrates 20 in a position facingtowards the inorganic alignment layer 36 on the side on which the TFTarray substrate is provided. This inorganic alignment layer 42 is formedby twice performing the oblique evaporation such as fixing the facingsubstrates 20 on which the second shading layer 23 and the facingelectrodes 21 are formed at a certain angle, performing evaporation ofinorganic material such as silicon oxide unidirectionally, andperforming the second oblique evaporation from a different direction soas to grow the columnar structure, of which the alignment direction isdifferent, on the substrate.

[0100] In FIGS. 2 and 4, reference symbols S_(C) and S_(D) are obliqueevaporation directions of inorganic material when forming the inorganicalignment layer 42 of the side on which the facing substrates 20 areformed. Regarding these oblique evaporation directions S_(C) and S_(D),as shown in FIG. 8, angle θ₃ made between the facing substrate 20 is 5degrees to 10 degrees, and the angle θ₄ made between the facingsubstrate 20 is 25 degrees to 30 degrees. The height of the gap sectionon the surface of the facing substrate 20 is small as compared to thecase of the TFT array substrate 10; thus, a shade made by the gapsection when operating the oblique evaporation of inorganic material wasnot occur, and defective evaporation areas are not produced. Therefore,from this point of view, the oblique evaporation of inorganic materialneed not be performed twice as compared to the case of inorganicalignment layer 36 of the TFT array substrate. However, in thisembodiment, in order to set the pre-tilt angle within 5 degrees to 20degrees, the oblique evaporation is performed twice on the facingsubstrate 20 so as to form the inorganic alignment layer 42. In the TFTarray substrate and the facing substrate 20, pixel electrode 9 a isdisposed so as to face towards the facing electrodes 21. Consequently,in the space surrounded by these substrates 10 and 20 and a shieldingmaterial 51 to be described later (refer to FIGS. 13 and 14), liquidcrystals in which dielectric anisotropy is positive is enclosed; thus,the liquid crystal layer 50 is formed. The alignment of the liquidcrystal layer 50 enters a predetermined condition by the operation ofinorganic alignment layers 36 and 42 under conditions in which electricfield is not impressed from the pixel electrode 9 a(no-voltage-impression condition). Additionally, in this specification,“voltage-impression-condition” means that the voltage impressed on theliquid crystal layer is the threshold voltage value of the liquidcrystal or less, and “no-voltage-impression condition” means that thevoltage impressed to the liquid crystal layer is the threshold voltagevalue of the liquid crystal or more.

[0101] The major axis of the liquid crystal molecules 50 a close to thearea where the first inorganic oblique evaporation layer 36 a is formedis aligned towards the surface including the direction along the obliqueevaporation direction S_(A), when an electric field is not impressed(no-voltage-impression condition) as shown in FIG. 5, pre-tilt angleθ_(P) is 25 degrees to 45 degrees. Such alignment of liquid crystalmolecules 50 a is caused because of the first inorganic obliqueevaporation layer 36 a having spaces 37 in the slanted columnarstructure, as previously mentioned, and because of the surface shapeeffect of the liquid crystal layer 50 of the first inorganic obliqueevaporation layer 36 a.

[0102] The major axis of the liquid crystal molecules 50 a in the areaclose to the gap section 80 where the second inorganic obliqueevaporation layer 36 b is formed is aligned towards the surfaceincluding the direction along the oblique evaporation direction S_(B)under the no-voltage-impression condition as shown in FIG. 6, and thealignment is parallel such as the pre-tilt angle θ_(P) with almost 0degree. Such alignment of liquid crystal molecule 50 a is caused becausethe construction of the second inorganic oblique evaporation layer 36 bis such that the groove structure 38 obtained by the dense formation ofthe columnar structure of slanted inorganic material is formed on thesurface on which the liquid crystal layer 50 is formed, as previouslydescribed, and also because the liquid crystal layer 50 of the secondinorganic oblique evaporation layer 36 b has the surface shape effect.Also, the liquid crystal molecules 50 a close to the area where thesecond inorganic oblique evaporation layer 36 b is formed on the firstinorganic oblique evaporation layer 36 a (at least the section on bothsides of the gap section 80) has a pre-tilt angle between the pre-tiltof the liquid crystal molecules 50 a near the first inorganic obliqueevaporation layer 36 a and the pre-tilt of the liquid crystal molecules50 a near the second inorganic oblique evaporation layer 36 b. Thepre-tilt angle of the liquid crystal molecule 50 a depends on the ratioof the thickness of the first inorganic oblique evaporation layer 36 aand the second inorganic oblique evaporation layer 36 b. Such alignmentof liquid crystal molecules 50 a occurs because the construction of thearea where the second inorganic oblique evaporation layer 36 b is formedon the first inorganic oblique evaporation layer 36 a is such that thespaces 37 between the columnar structures shown in FIG. 5 are filledwith the columnar structures of the second inorganic oblique evaporationlayer 36 b, and also because the liquid crystal layer 50 with such astructure has the surface shape effect.

[0103] According to above construction of the alignment layer, theaverage pre-tilt angle θ_(P) of the liquid crystal molecule 50 a of theliquid crystal layer 50 of present embodiment is set between 5 degreesto 20 degrees. The average pre-tilt angle θ_(P) of the liquid crystalmolecules 50 a can actually be controlled by adjusting factors such asthe ratio of thickness of the first inorganic oblique evaporation layer36 a and the second inorganic oblique evaporation layer 36 b, and theoblique evaporation angles θ_(P) and θ₂. Additionally, under conditionsin which φ is the twist angle of the liquid crystal molecule of theliquid crystal layer 50, and d is the cell gap, the helical pitch P ofthe liquid crystal material to be used for liquid crystal layer 50 isset to satisfy the Relationship such that

(0.6/360)φ<d/P<(1.4/360)φ.   RELATIONSHIP R1

[0104] More specifically, in the case of the present embodiment, the TNmode is used for the display method on the ordinary base as an activematrix type liquid crystal device, and the twist angle φ of the liquidcrystal layer 50 is 90 degrees. Regarding the alignment direction ofinorganic alignment layers 36 and 42 of each substrate, on the side ofTFT array substrate 10, the liquid crystal molecules are aligned in thedirection along the evaporation angle S_(A) of the first obliqueevaporation step as shown in FIG. 5, the liquid crystal molecule isaligned in the direction along the evaporation angle S_(C), and thetwist angle becomes 90 degrees on the facing substrate 20. Therefore, ifthe cell gap d is 3 μm, the Relationship 1 can be represented as

8.6(μm)<P<20(μm).  RELATIONSHIP R1′

[0105] Therefore, the liquid crystal device of the present embodimentcan be realized by selecting the material for the liquid crystal inwhich helical pitch P satisfies the above RELATIONSHIP R1′. The helicalpitch P can be controlled by adjusting the amount of chiral complex tobe added to the material of the liquid crystal, preferably, amongvarious materials for the liquid crystal.

[0106] In the liquid crystal device of the present embodiment, theaverage pre-tilt angle θ_(P) of the liquid crystal molecules 50 a of theliquid crystal layer 50 is 5 degrees to 20 degrees. By setting the valueof d/P as a ratio between the cell gap d of the liquid crystal deviceand the helical pitch P of the liquid crystal layer 50 so as to satisfyabove relation RELATIONSHIP R1, disclination which was previously causedin the conventional liquid crystal device using the inorganic alignmentlayer can be prevented effectively. Also, the liquid crystal device canbe free from inferior display such as light leakage due to thedisclination; thus, a liquid crystal device with good contrast can berealized. Also, inorganic alignment layers 36 and 42 are inorganicoblique evaporation layers; therefore, good light resistance and heatresistance can be obtained as compared to the case of organic layerssuch as polyimide or the like; thus, such inorganic alignment layers canbe preferable for the liquid crystal light valve.

[0107] Second Embodiment

[0108] A second embodiment of present invention is explained as follows.

[0109] The basic construction of the liquid crystal device of presentembodiment is the same as the liquid crystal device of the firstembodiment. The difference is in the structure of the inorganicalignment layer on each substrate and the material for the liquidcrystal. Therefore, in this embodiment, only such different points areexplained.

[0110] In the first embodiment, the inorganic alignment layer 36 on theTFT array substrate 10 and the inorganic alignment layer 42 on thefacing substrate 20 are the columnar structures in which the slantingdirections formed in the two oblique evaporations are different. Incontrast, in the present embodiment, these inorganic alignment layers 36and 42 are columnar structures in which the slanting direction formed byone oblique evaporation is aligned in one direction. That is, in FIG. 2used in the explanation of the first embodiment, on the side of TFTarray substrate 10, it may be understood that the direction of the majoraxis of the liquid crystal molecule is aligned to the direction alongthe oblique evaporation direction S_(A) when forming the inorganicalignment layer 36. Also, on the side of the facing substrate 20, it maybe understood that the direction of the major axis of the liquid crystalmolecule is aligned to the direction along the oblique evaporationdirection S_(C) when forming the inorganic alignment layer 42.

[0111] According to the above structure of the alignment layers, in thecase of the present embodiment, the average pre-tilt angle θ_(P) of theliquid crystal molecules 50 a of the liquid crystal layer 50 is set soas to be 20 degrees or larger. The average pre-tilt angle θ_(P) of theliquid crystal molecules 50 a can actually be controlled by adjustingthe oblique evaporation angle. In addition, under conditions that φ isthe twist angle of the liquid crystal molecules of the liquid crystallayer 50 and d is the cell gap, the helical pitch P of the material ofthe liquid crystals to be used for the liquid crystal layer 50 is set soas to satisfy following relationship RELATIONSHIP 2

(0.8/360)φ<d/P<(1.6/360)φ.   RELATIONSHIP 2

[0112] More specifically, and similarly to the case of the firstembodiment, under conditions that the twist angle φ is 90 degrees andthe cell gap d is 3 μm, relationship RELATIONSHIP 2 can be representedsuch as relationship RELATIONSHIP 2′

7.5(μm)<P<15(μm).   RELATIONSHIP 2′

[0113] Therefore, the liquid crystal device of the present embodimentcan be realized by selecting the material for the liquid crystal inwhich helical pitch P satisfies the above relationship RELATIONSHIP 2′.The helical pitch P can be controlled by adjusting the amount of chiralcomplex to be added to the material of the liquid crystal, preferably,among various materials for the liquid crystal.

[0114] In the liquid crystal device of the present embodiment, theaverage pre-tilt angle θ_(P) of the liquid crystal molecules 50 a of theliquid crystal layer 50 is 20 degrees or larger. By setting the value ofd/P as a ratio between the cell gap d of the liquid crystal device andthe helical pitch P of the liquid crystal layer 50 so as to satisfy theabove relationship RELATIONSHIP 2, disclination which was caused in theconventional liquid crystal device using the inorganic alignment layercan be prevented effectively. Also the liquid crystal device can be freefrom inferior display such as light leakage due to the disclination;thus, a liquid crystal device with good contrast can be realized. Thus,similar effects to the case of the first embodiment can be obtained suchthat a liquid crystal device with good light resistance and heatresistance can be obtained as compared to the case of an organic layersuch as polyimide or the like; thus, a liquid crystal device which isadvantageous as a liquid crystal light valve can be realized.

[0115] In the above embodiment, although the explanation was made forthe case in which the present invention is applied to an active matrixtype liquid crystal device using a three-terminal type element such as aTFT element, the present invention can also be applied to active matrixtype liquid crystal devices using a two-terminal type element such as aTFD element, and to passive matrix type liquid crystal devices. Also,the present invention can be applied to any type of liquid crystaldevice, regardless of whether it is of the transmission type, reflextype, or semi-transmission reflex type.

[0116] For a TFT element, a silicon semiconductor made of polysilicon,or semiconductor layer made of single crystal silicon can be used. Inthe case of forming a semiconductor layer made of single crystalsilicon, a bonding method is used in which a single crystal substrate isbonded to a supporting substrate in an SOI (Silicon on Insulator) andthen the single crystal substrate is made to be a thin film, can beused.

[0117] Overall Construction of the Liquid Crystal Device

[0118] Next, the overall construction of the liquid crystal device isexplained with reference to FIGS. 9 and 10. FIG. 9 is a plan viewshowing a TFT array substrate 10 and each element formed thereon viewedfrom the side of the facing substrate 20.

[0119]FIG. 10 is a cross section along line H-H′ in FIG. 9 and shows thefacing substrate 20. In FIGS. 9 and 10, inorganic alignment layers 36and 42 are omitted.

[0120] In FIG. 9, on the TFT array substrate 10, a shielding material 52is provided along the edge of the TFT array substrate 10, and the thirdshading layer 53 as a frame, which is made of the same material as thematerial for the second shading layer 23 or is made of differentmaterial from the material for the second shading layer 23, is providedin parallel inside the shielding material 52. In the area outside of theshielding material 51, a data line driving circuit 101 and an externalcircuit connecting terminal 102 are provided along one member of the TFTarray substrate, and scanning line driving circuits 104 are providedalong two vertical members of the TFT array substrate contacting onebottom member of the TFT array substrate. Furthermore, on the rest ofthe members of TFT array substrate 10, a plurality of wirings 105 forconnecting the scanning line driving circuits 104 provided on both sidesof the picture display area are provided.

[0121] Also, at least in one corner section of the facing substrate 20,a conducting member 106 for the purpose of electric conductance betweenthe TFT array substrate 10 and the facing substrate 20 is provided.Consequently, as shown in FIG. 10, the facing substrate 20 having almostthe same outline as the bonding member 52 shown in FIG. 9 is fix on theTFT array substrate 10 by the bonding member 52.

[0122] On the TFT array substrate 10 of the liquid crystal device ineach embodiment as explained above with reference to FIGS. 1 to 10,inspection circuits or the like are disposed for inspecting the qualityof the liquid crystal device in the manufacturing process or at the timeof shipment. Also, instead of providing the data line driving circuit101 and the scanning line driving circuit 104 on the TFT array substrate10, the data line driving circuit 101 and the scanning line drivingcircuit 104 can be connected electrically and mechanically to thedriving LSI mounted on, for example, a TAB (tape automated bonding)substrate via an anisotropic film provided around the TFT arraysubstrate. Also, on the side to which projection light of the facingsubstrate 20 is incident and on the side from which emitting light isemitted from the TFT array substrate 10, a polarizing light film, phasedifference film, polarizing light device and the like are disposed inpredetermined directions according to the operation modes such as forexample TN (Twisted Nematic) mode, VA (Vertically Aligned) mode, PDLC(Polymer Dispersed Liquid Crystal) mode, also according to modes such asnormally-white-mode or normally-black-mode.

[0123] The liquid crystal device in the embodiment explained above canbe applied to, for example, a color liquid crystal projector (projectiondisplay device). In this case, three liquid crystal devices are used aslight valves for R, and G, and B, and each color light dispersed viadichroic mirror for dispersing R, and G, and B colors are incident toeach light valve respectively as projection light. Accordingly, in eachembodiment, a color filter is not provided on the facing substrate 20.However, RGB color filters and a protection layer therefore can beformed on the facing substrate 20 in predetermined areas facing towardsa pixel electrode 9 a on which the second shading layer is not formed.By doing this, the liquid crystal device in the embodiment can beapplied to color liquid crystal devices such as a direct-view type colorliquid crystal television and a reflex type color liquid crystaltelevision which are not liquid crystal projectors.

[0124] Electronic Device

[0125] As an example of an electronic device using the liquid crystaldevice in the embodiment of the present invention, the construction ofthe projection display device is explained with reference to FIG. 11. Inprojection display device 1100 in FIG. 11, three liquid crystal devicesof the above embodiment are prepared, and the optical system of theprojection liquid crystal device is constructed such that each liquidcrystal device is used as liquid crystal devices 962R, 962G, and 962Bfor colors such as R, and G, and B. In the optical system of theprojection display device of present invention, a light source device920, and an uniform lighting optical system 923 are employed.Additionally, the projection display device comprises a light separatingoptical system 924 as a means for separating the light beam W emittedfrom this uniform lighting optical system 923 into colors such as red(R), green (G), and blue (B), three light bulbs 925R, 925G, and 925B asa modulating means for modulating each colored light beam such as R, G,and B, a color synthesizing prism 910 as a color synthesizing means forresynthesizing the color light beams after the modulation, a projectionlens unit 906 as a projection means for enlarging and projecting thesynthesized light beams on a projecting plane 100. Also this projectiondisplay device is provided with a light-guiding optical system 927 forguiding the blue color beam B into the light valve 925B.

[0126] The uniform lighting optical system 923 is provided with two lensplates 921, 922, and a reflex mirror 931. Two lens plates 921 and 922are disposed so as to be orthogonal to each other, and the reflex mirror931 is disposed between lens plates 921 and 922. Two lens plates 921 and923 of the uniform lighting optical system 923 are provided with aplurality of rectangular lenses disposed in a matrix respectively. Thelight beam emitted from the light source device 920 is split into aportion of a light beams. These split light beams are superimposed nearthe three light valves 925R, 925G, and 925B by the rectangular lens ofthe second lens plate 922. Accordingly, by using the uniform lightingoptical system 923, lighting three light valves 925R, 925G, and 925Bwith uniform light is possible even if the luminous intensity of thelight source device 920 is not uniform in the cross section of emittedlight beams.

[0127] A respective color separating optical system 924 comprises a blueand green reflex dichroic mirror 941, a green reflex dichroic mirror942, and a reflex mirror 943. First, in the blue and green reflexdichroic mirror 941, a blue light beam B and a green light beam Gincluded in the light beam W are reflected orthogonally, and are sent toa side of the green reflex dichroic mirror 942. The red light beam Rpasses through this mirror 941, and is reflected orthogonally at thereflex mirror 943 disposed behind the blue and green reflex dichroicmirror 941, and is then emitted to a side of the color synthesizingprism 910 from the emission section 944 of the red color light beam R.

[0128] Next, in the green reflex dichroic mirror 942, only the greenlight beam G among the blue light beam B and the green light beam Greflected at the blue and green reflex dichroic mirror 941 is reflectedorthogonally, it is then emitted to a side of a color synthesizingoptical system from the emission section 945 of the green light beam G.The blue light beam B which passed the green reflex dichroic mirror 942is emitted to a side of the light guiding optical system 927 from theemission section 946 of the blue light beam B. In this example, in thecolor separating optical system, the distance between the emissionsection of the light beam W of uniform lighting optical element and theemission sections of each color 944, 945, and 946 are set to be nearlyequal.

[0129] In the emission side of the emission sections 944 and 945 of thered light beam R and green light beam G of the color separating opticalsystem 924, condensing lenses 951 and 952 are disposed respectively.Accordingly, the red light beam R and the green light beam G emittedfrom each emission section are made to enter these condensing lenses 951and 952 and are made to be parallel.

[0130] The red light beam R and green light beam G which are madeparallel are made incident into the light valve 925R and 925G, and aremodulated, and then the picture information corresponding to each colorlight is added. That is, the switching control is performed on theseliquid crystal devices according to the picture information by thedriving devices (not shown in the drawings). By doing this, themodulation of each color of light passing therethrough is performed. Onthe other hand, the blue light beam B is guided into the correspondinglight valve 925B via the light guiding optical system 927, and themodulation according to the picture information is performed similarlyhere. In addition, the light valves 925R, 925G, and 925B respectivelyfurther comprise an incident side polarizer 960R, 960G, and 960B, anemission side polarizer 961R, 961G, and 961B, and a liquid crystaldevice 962R, 962G, and 962B which are disposed between the abovepolarizer.

[0131] The light guiding optical system 927 comprises a condensing lens954 disposed in emission side of the emission section 946 of the bluelight beam B, an incident side reflex mirror 971, an emission sidereflex mirror 972, an intermediate lens 973 disposed between thesereflex mirrors, and a condensing lens 953 disposed ahead of the lightvalve 925B. The blue light beam B emitted from the condensing lens 954is guided to the liquid crystal device 962B via the light guidingoptical system 927 and is then modulated. Regarding the length of thelight path of each color light beam, in other words, regarding thedistance between the emission section of the light beam W and eachliquid crystal device 962R, 962G, and 962B, the optical path of the bluelight beam B is the longest. Therefore, the blue light beam B loses themost light. However by the intervention of the light guiding opticalsystem 927, the loss of the light can be restricted.

[0132] Each color light beam R, G, and B which passes through each lightvalve 925R, 925G, and 925B and is modulated is incident on the colorsynthesizing prism 910, and is combined there. The light synthesized bythe color synthesizing prism 910 is magnified and projected on thesurface of the projection plane 100 disposed in the predeterminedposition via the emission lens unit 906.

[0133] The liquid crystal devices 962R, 962G, and 962B of this exampleare explained with reference to FIGS. 1 to 10. By using the liquidcrystal device of the above embodiment, a liquid crystal device, with noinferior quality display and inferior contrast, which is a high qualityprojection display device, can be realized.

[0134] Construction of the Liquid Crystal Device of the Third Embodiment

[0135] The construction of the liquid crystal device of the thirdembodiment is the same as the construction of the liquid crystal deviceof the first embodiment; therefore, duplicated explanations are omitted.

[0136] As shown in FIG. 3, the first shading layer 111 is provided inthe position corresponding to the pixel switching TFT 30 on the surfaceof the TFT array substrate 10. The first shading layer 111 comprises ametal layer M1 provided on the TFT array substrate 10 and a barrierlayer BI provided on the metal layer M1.

[0137] The barrier layer B1 is made of a metal or metal compound whichdoes not include Oxygen atoms therein and the melting point of the metalor metal compound is high. More specifically, the barrier layer B1 ismade of any of nitride compound, silicon compound, tungsten compound,tungsten, and silicon.

[0138] Also, the metal layer M1 is made of a metal or metal compoundwhich has light blocking tendency and high melting point. The metallayer M1 is made of metal or metal compound of which light shadingtendency deteriorates if the metal layer M1 becomes an oxide compound bythe chemical reaction with the insulating layer made of SiO₂.

[0139] Also, between the first shading layer 111 and a plurality ofpixel switching TFT 30, the first insulating layer 12 is provided. Thefirst insulating layer 12 is provided for the purpose of insulating thesemiconductor layer la forming the pixel switching TFT 30 from the firstshading layer 111 electrically. Furthermore, the first insulating layer12 is formed on the entire surface of the TFT array substrate 10, andthe surface of the first insulating layer 12 is ground so as to nullifythe gap of the pattern of the first shading layer 111, and a flatteningtreatment is performed on the surface of the first insulating layer 12.

[0140] The first insulating layer 12 is made of, for example, highlyinsulating glass, a silicon oxide layer, silicon nitride layer and thelike. By this first insulating layer 12, the situation in which thefirst shading layer 111 contaminates the pixel switching TFT 30 can beprevented as a precaution.

[0141] In the present embodiment, the accumulating capacity 70 is madesuch that a gate insulating layer 2 is extended from the position facingtowards the scanning line 3 a and the gate insulating layer 2 is used asa dielectric substance, the semiconductor layer 1 a is extended to bemade as the first accumulating capacity electrode if, and a part of thecapacity line 3 b facing towards the above gate insulating layer 2 andthe semiconductor layer 1 a is made to be the second accumulatingcapacity electrode.

[0142] More specifically, the highly dense drain area le of thesemiconductor layer 1 a is extended beneath the data line 6 a and thescanning line 3 a, and the highly dense drain area 1 e of thesemiconductor layer 1 a is disposed so as to face towards the capacityline 3 b extending along the data line 6 a and the scanning line 3 a viathe insulating layer 2; then, the highly dense drain area 1 e of thesemiconductor layer 1 a is made to be the first accumulating capacityelectrode (semiconductor layer) 1 f. In particular, the insulating layer2 as a dielectric substance of the accumulating capacity 70 is the gateinsulating layer 2 of TFT 30 formed on the single crystal layer byoxidation at high temperature. Therefore, the insulating layer 2 can bemade to be thin and an anti-high-voltage insulating layer, and thecapacity of the accumulating capacity 70 can be large in a relativelysmall area.

[0143] In addition, as can be understood from FIGS. 2 and 3, theconstruction of the accumulating capacity 70 is made such that the firstshading layer 111 as the third accumulating capacity electrode isdisposed so as to face towards the first accumulating capacity electrode1 f via the first insulating layer 12 in the opposite side of thecapacity line 3 b as the second accumulating capacity electrode (to bereferred to as the accumulating capacity 70 in the right-hand side ofFIG. 3); thus, the accumulating capacity is increased. That is, theconstruction of the present embodiment is a double accumulating capacityconstruction in which the accumulating capacity is provided on bothsides of the first accumulating capacity electrode 1 f; thus, theaccumulating capacity increases.

[0144] Above first shading layer 111 (and the capacity line 3 b which isconnected to the first shading layer 111 electrically) is connected to aconstant power supply electrically, and the electric potential of thefirst shading layer 111 and the capacity line 3 b are constant.Accordingly, the fluctuation of the electric potential of the firstshading layer 111 does not adversely inferior influence the pixelswitching TFT 30 which is disposed so as to face towards the firstshading layer 111. Also, the capacity line 3 b can function properly asthe second accumulating capacity electrode of the accumulating capacity70. In this case, for the constant power supply, a negative power supplysupplied to peripheral circuits such as scanning line driving circuitsand data line driving circuits for driving the liquid crystal device, aconstant power supply such as positive power supply, a grounding powersupply, and a constant power supply which is supplied to the facingelectrode 21 can be mentioned. By using the power supply of theperipheral circuit in this way, it is possible to make the electricpotential of the first shading layer 111 and the capacity line 3 bconstant without providing exclusive electric potential wirings andauxiliary input terminals.

[0145] Also, on the first shading layer 111, a contact hole 13 is openedon the projecting section which projects from the main line sectionextending almost linearly as explained above. Here, in the opening areaof the contact hole 13, it is known that less cracking is generated inareas closer to the edge due to reasons such as the dissipation ofstress from the edge.

[0146] Also, as above explained, the first shading layer 111 is providedbeneath the pixel switching TFT 30; thus, the incidence of returninglight at least into a channel area 1 a′ of the semiconductor layer laand into LDD areas 1 b and 1 c can be prevented effectively.

[0147] In addition, in this embodiment, the capacity line 3 b providedin the neighboring pixel of the previous stage or in the neighboringpixel of latter stages is connected to the first shading layer 111;therefore, the capacity line 3 b for the pixel on the highest stage oron the lowest stage for supplying constant electric potential to thefirst shading layer 111 is necessary. For that case, an extra piece ofcapacity line 3 b for the vertical pixel should preferably be provided.

[0148] The second shading layer 23 has a function of, for example blackmatrix for the purpose of improving the contrast and preventing themixing of colors.

[0149] The thickness of inorganic alignment layer 42 is 5 nm to 16 nm.

[0150] The average pre-tilt angle θ_(P) of the liquid crystal molecules50 a of the liquid crystal layer 50 should preferably be 5 degrees to 15degrees, and more preferably 12 degrees to 14 degrees. The averagepre-tilt angle θ_(P) of the liquid crystal molecules 50 a can beadjusted by controlling factors such as the ratio of the thickness ofthe first inorganic oblique evaporation layer 36 a and the secondinorganic oblique evaporation layer 36 b, and such as obliqueevaporation angle θ₁ and θ₂. The liquid crystal molecules 50 a of theliquid crystal layer 50 are made such that the alignment can be changedwhen a voltage is impressed, and such conditions can be displayed byoptically distinguishing the alignment.

[0151] The shielding material 52 is a bonding agent made of, forexample, light curable resing or heat curable resin. In the shieldingmaterial 52, spacers such as glass fibers or glass beads for setting thedistance between both substrates at a predetermined value is mixed.

[0152] In the liquid crystal device of the present embodiment, inorganicalignment layer 36 formed on the underlayer having the gap section 80comprises the first inorganic oblique evaporation layer 36 a made of thecolumnar structure of slanted inorganic material, the second inorganicoblique evaporation layer 36 b in which the slanting direction of thecolumnar structure of the inorganic material of the second inorganicoblique evaporation layer 36 b is different from the slanting directionof the columnar structure of the inorganic material of the firstinorganic oblique evaporation layer 36 a in view of azimuth angledirection. In addition, the second inorganic oblique evaporation layer36 b is formed in the area 80 a close to the gap section 80; thus,unevenness of the evaporation of inorganic materials in the area 80 aclose to the gap section 80 and the occurrence of defective evaporationareas can be reduced. Accordingly, even if the pixel pitch becomes 20 μmor less, there can be no defect in the inorganic alignment layer formedon the underlayer having the gap section on the surface of theunderlayer, inferior alignment of liquid crystals due to abnormalitiesof the alignment layer can be prevented, the occurrence of inferiorquality display such as lowered contrast can be prevented. Such effectscan also be obtained even if the pixel pitch becomes as fine as 15 μm orless.

[0153] Also, inorganic alignment layers 36 and 42 are made of inorganicoblique evaporation layers; thus, light resistance and heat resistanceare better than the alignment layer made of an organic material such aspolyimide, and a more durable liquid crystal device can be obtained.

[0154] Regarding the construction of the liquid crystal device of thethird embodiment, the pixel electrode 9 a and the high density drainarea 1 e can be connected electrically by way of an aluminum layer whichis the same as the data line 6 a and by way of polysilicon layer whichis the same as the scanning line 3 b.

[0155] Although the pixel switching TFT 30 should preferably be made inLDD construction, off-set construction in which contaminating ions arenot shot into the low density source area 1 b and the low density drainarea 1 c is possible, and also the TFT can be of a self-aligning type inwhich contaminating ions are shot in high density by using the gateelectrode as a mask so as to form the high density source area and thehigh density drain area in a self-aligning manner.

[0156] Also, although in present embodiment the construction of the gateelectrode made of a part of the scanning line 3 a of the pixel switchingTFT 30 is a single-gate construction in which only one gate electrode isdisposed in the source drain area, the disposition of more than two gateelectrodes therein is possible. In this case, the same signal should beimpressed on each gate electrode. By making the TFT a dual gate, atriple gate, or more, leak current at the connection point of thechannel and the source drain area can be prevented, and the flowing ofthe electric current while the power is turned off can be reduced. Atleast one gate electrode can be in an LDD construction of an off-setconstruction.

[0157] Also, the semiconductor layer is not limited to be made ofpolysilicon, and single crystal silicon can also be used. For singlecrystal silicon, an SOI (Silicon on Insulator) construction in which athin layer single crystal layer is formed on the insulating layer ispreferable.

[0158] In particular, the insulating layer 2 as a dielectric substanceof the accumulating capacity 70 can be thin and resistant to highvoltages if the insulating layer 2 is a gate insulating layer of thepixel switching TFT 30 formed on the polysilicon layer by the oxidationin high temperature, and the capacity of the accumulating capacity 70can be large in a relatively small area.

[0159] Manufacturing Process of Liquid Crystal Device of ThirdEmbodiment

[0160] Next, a manufacturing process for a liquid crystal device of thethird embodiment is explained with reference to FIGS. 7, 8, and 12 to15. FIGS. 12 and 13 show each layer of TFT array substrate 10 in eachstep, and FIGS. 14 and 15 are step diagrams and show each layer of thefacing substrate 20 in each step similarly to the FIG. 3 incorrespondence to the cross section taken along the line A-A′ in FIG. 2.

[0161] As shown in FIG. 12, on the TFT array substrate 10 made of aquartz substrate and hard glass, the first shading layer 111 made ofmetal layer M1 and barrier layer B1, the first insulating layer 12,contact hole 13, semiconductor layer 1 a, channel area 1 a′, low densitysource area 1 b, low density drain area 1 c, high density source area 1d, high density drain area 1 e, the first accumulating capacityelectrode 1 f, insulating layer 2, scanning line 3 a, capacity line 3 b,the second insulating layer 4, data line 6 a, the third insulating layer7, contact hole 8, and pixel electrode 9 a are formed for the apreparation.

[0162] The gap section 80 is formed on the surface of the TFT arraysubstrate (the surface of the underlayer of the inorganic alignmentlayer 36 to be mentioned later) on which the pixel electrode 9 a and thelike are formed.

[0163] Next, as shown in FIG. 7, the first oblique evaporation step isperformed in which the first inorganic oblique evaporation layer 36 a isformed in order that the thickness of the first inorganic obliqueevaporation layer 36 a be 5 nm to 16 nm by performing the obliqueevaporation of inorganic material unidirectionally on the surface of theTFT array substrate 10 having the gap section 80 on the surface of theTFT array substrate as shown in FIG. 5. In this first inorganic obliqueevaporation step, the first inorganic oblique evaporation layer 36 a isnot formed in the shadow of the evaporation, that is, in the area 80 aclose to the gap section 80. This first inorganic oblique evaporationlayer 36 a is formed in the area 80 b which excludes the area 80 a closeto the gap section 80.

[0164]FIG. 7 shows the TFT array substrate 10 on which pixel electrode 9a and the like are formed viewed from the upward direction (from thesurface side of the underlayer of the alignment layer), pixel electrode9 a, contact hole 8, and the third insulating layer 7 are omitted in thedrawing. This oblique evaporation direction S_(A) is orthogonal to thedirection of the scanning line 3 a and the capacity line 3 b, and theoblique evaporation direction S_(A) is directed from below to above inFIG. 2. Such disposition of the oblique evaporation direction S_(A) isin order to reduce the area in which the inorganic oblique evaporationlayer is not made due to the shadow made by the gap section 80 whenperforming the oblique evaporation in the direction from the bottom tothe top of the plan view in FIG. 2, the gap of the gap section of thesurface of the underlayer near the line B-B′ is larger than the gap ofthe gap section on the surface of the underlayer near the line C-C′ inFIG. 2.

[0165] Also, the oblique evaporation direction S_(A) should preferablybe disposed in such a way that the evaporation angle θ₁ made by the TFTarray substrate 10 is 5 degrees to 10 degrees as shown in FIG. 7. If theevaporation angle θ₁ of the inorganic material in the first obliqueevaporation step is less than 5 degrees, the density of the columnarstructures to be formed becomes too low; thus, the alignment conditionof the liquid crystal molecules 50 a becomes unstable, and the alignmentdirection becomes very uneven inside the plane along the inside planedirection of the substrate. If the evaporation angle θ₁ is larger than10 degrees, the density of the columnar structures to be formed becomestoo high; thus, the effect that the spaces 37 between the columnarstructures of the first inorganic oblique evaporation layer 36 a arefilled with the columnar structures of the second inorganic obliqueevaporation layer 36 b can hardly be obtained. As a result, if theliquid crystal device is manufactured by using this substrate, the areain which there is no pre-tilt in the alignment of the liquid crystalmolecules becomes large.

[0166] Next, as shown in FIG. 7, the second oblique evaporation step isperformed in such a way that the oblique evaporation of inorganicmaterial is performed such that at least the oblique evaporationdirection S_(A) of inorganic material in the first oblique evaporationstep is different from the oblique evaporation direction S_(B) withregard to the azimuth angle direction φ along the inside plane directionof the substrate, and in such a way that the second inorganic obliqueevaporation layer 36 b is formed such that the thickness of the secondinorganic oblique evaporation layer 36 b is 10 μm to 40 μm in the area80 a close to the gap section 80 where the first inorganic obliqueevaporation layer 36 a is not formed thereon, and on the first inorganicoblique evaporation layer 36 a as shown in FIG. 6.

[0167] This oblique evaporation direction S_(B) is along the directionof scanning line 3 a and the capacity line 3 b, and is also a directionfrom the right-hand side to the left-hand side in the plan view in FIG.2. By the disposition that the azimuth angle direction φ between theoblique evaporation direction S_(A) and the azimuth angle direction ofthe oblique evaporation direction S_(B) is different, the firstinorganic oblique evaporation layer 36 a can be formed favorably in thearea 80 b where the area 80 a close to the gap section 80 is excluded,and also the second inorganic oblique evaporation layer 36 b can beformed favorably in the area 80 a close to the gap section 80 a wherethe first inorganic oblique evaporation layer 36 a is not formed and onthe first inorganic oblique evaporation layer 36 a.

[0168] Also, in the oblique evaporation direction S_(B), the evaporationangle θ₂ made by the TFT array substrate 10 should preferably be 25degrees to 30 degrees as shown in FIG. 7.

[0169] If the evaporation angle θ₂ of the oblique evaporation directionS_(B) in the second oblique evaporation step is less than 25 degrees,the effect that the space 37 in the columnar structure of the firstinorganic oblique evaporation layer 36 a is filled with the columnarstructure of the second inorganic oblique evaporation layer 36 b canhardly be obtained. If the evaporation angle θ₂ is larger than 30degrees, anisotropy of the surface of the layer to be formed becomesinsufficient, and the function for aligning the liquid crystal moleculesis lost.

[0170] By the first inorganic oblique evaporation step and the secondinorganic oblique evaporation step, the TFT array substrate on which theinorganic alignment layer 36 is formed can be obtained as shown in FIG.13.

[0171] On the other hand, the facing substrate 20 is formed in such away that, the glass substrate or the like is prepared first, thesputtering process using, for example, chrome metal is performed on thesecond shading layer 23 and on the third shading layer 53 as a frame, tobe explained later (with reference to FIGS. 13 and 14), and after that,the photo-lithography step and the etching step are performed. Theseshading layers can be formed by metallic material such as chrome (Cr),nickel (Ni), and aluminum (Al), and by resin material such as resinblack made by spraying carbon and titanium onto photo-resist.

[0172] After that, the facing electrode 21 is formed in such a way thatthe transparent conductive layer made of ITO or the like is layered onthe entire surface of the facing substrate 20 with a thickness of 50 to200 nm by performing the sputtering process as show in FIG. 14.

[0173] Next, as shown in FIG. 8, the oblique evaporation is performed byfixing the facing substrate 20 on which the second shading layer 23 andthe facing electrode 21 and the like are formed with a certain angle, byperforming the evaporation of an inorganic material such as siliconoxide from the direction S_(C) unidirectionally, and by growing thecolumnar structures which are aligned with a predetermined angle towardsthe substrate.

[0174] Additionally FIG. 8 shows the facing substrate 20 on which thefacing electrode and the like are formed viewed from the top surfaceside (the surface side of the underlayer of the alignment layer), andthe facing electrode 21 is omitted in the drawing.

[0175] In FIG. 8, the reference symbol S_(C) is a oblique evaporationdirection for inorganic material when forming the inorganic alignmentlayer 42 on the side of facing substrate 20. The angle θ₃ made betweenthis oblique evaporation direction S_(C) and the facing substrate 20 is5 degrees to 10 degrees as shown in FIG. 8.

[0176] By doing this, the facing substrate 20 with the facing electrode21 on which the inorganic alignment layer 42 is provided can be obtainedas shown in FIG. 15.

[0177] Here, the oblique evaporation direction S_(C) is different by 180degrees from the oblique evaporation direction S_(A) when forming thefirst inorganic alignment layer 36 a.

[0178] Consequently, an empty panel is formed by disposing the TFT arraysubstrate 10 and the facing substrate 20 of which each layer is formedin above manner in such a way that each oblique evaporation direction isopposite to the other, in other words, the direction of alignment of theTFT array substrate 10 and the facing substrate 20 is opposite to thealignment direction of the columnar structure which is aligned at apredetermined angle, and by bonding the substrates by the shieldingmaterial 52 so as to make the thickness of the cell to be 4 μm. Theliquid crystal such as positive fluorine liquid crystal is enclosed inthe panel; thus, the liquid crystal device of the present embodiment canbe obtained.

[0179] In this embodiment, the second shading layer 23, the facingelectrode 21, and the alignment layer 42 are provided on the facingsubstrate 10 in this order; thus, the advantage that high voltage is notnecessary for driving the liquid crystal is obtainable. Instead of thisdisposition, the disposition in the order of the facing electrode 21,the second shading layer 23, and the alignment layer 42 is possible. Inthat case, the patterning of the second shading layer 23 and thealignment layer 42 can be performed in one operation; thus, advantagessuch as more simplified manufacturing process can be obtained.

[0180] According to the manufacturing method for a substrate of theliquid crystal device in the present embodiment, the first and thesecond oblique evaporation steps are provided, the oblique evaporationdirection S_(A) of the inorganic material of the first obliqueevaporation step and oblique evaporation direction S_(B) of theinorganic material of the second oblique evaporation step are differentwith regard to the azimuth angle direction φ along the inside planedirection of the substrate. Therefore, in the second oblique evaporationstep, the inorganic oblique evaporation layer can be formed in the areaon which the inorganic oblique evaporation layer could not be formed inthe first oblique evaporation step. Although, in the first obliqueevaporation step, the first inorganic oblique evaporation layer 36 a isformed in the area 80 b where the area 80 a close to the gap section 80is excluded, the area 80 a close to the gap section 80 is in the shadowof the gap section 80; thus, the area where the first inorganic obliqueevaporation layer 36 a is not formed is generated. However, by changingthe azimuth angle direction of the oblique evaporation direction S_(B)of the inorganic material so as to differ from the azimuth angledirection of the oblique evaporation direction S_(A) of the inorganicmaterial in the evaporation of inorganic material, the second inorganicoblique evaporation layer 36 b can be formed in the area 80 a where theinorganic oblique evaporation layer could not be formed in the firstoblique evaporation step due to the shadow made by the gap section 80.Also, in the second oblique evaporation step, the second inorganicoblique evaporation layer 36 b can be also formed at least on the firstinorganic oblique evaporation layer 36 a which is on both sides of thegap section 80.

[0181] According to the manufacturing method for substrate of the liquidcrystal device with such a construction, a suitable substrate for aliquid crystal device of the present embodiment can be manufactured.

[0182] Additionally, in the liquid crystal device and the manufacturingmethod for a substrate of the liquid crystal device of the aboveembodiment, the explanation was made for the case in which the presentinvention is applied to an active matrix type liquid crystal deviceusing a three-terminal element typically represented by a TFT element,and to a manufacturing method for this substrate for a liquid crystaldevice. The present invention can also be applied to an active matrixtype liquid crystal device using a two-terminal element typicallyrepresented by a TFD element, the manufacturing method for a substrateof this liquid crystal device, a passive matrix type liquid crystaldevice, and the manufacturing method for a substrate for this liquidcrystal device. Also, the present invention can be applied not only to atransparent type liquid crystal device, but also to a reflex type liquidcrystal device.

[0183] Additionally, in the manufacturing method for the liquid crystaldevice of the above embodiment, the explanation was made for the case inwhich the inorganic alignment layer 36 on the side TFT array substrate10 is formed in the first and the second oblique evaporation steps, inother words, with a method in which the evaporation is performed twicewhile changing the azimuth angle direction. Even if the height of thegap section of the surface of the underlayer of the inorganic alignmentlayer 42 on the side of the facing substrate 20 is large, inorganicalignment layer 36 may be formed in the first and the second obliqueevaporation steps, in other words, by a method in which the evaporationis performed twice while changing the azimuth angle direction. Forexample, inorganic alignment layer 36 is formed with the obliqueevaporation step in which the facing substrate 20 on which the facingelectrode 21 and the like are formed are fixed with a certain angle,evaporation of inorganic material such as silicon oxide is performedfrom a direction S_(C) unidirectionally, the columnar structures alignedtowards the substrate 20 with a predetermined angle is grown.Consequently, inorganic alignment layer 36 can be formed with theoblique evaporation step in which the oblique evaporation of inorganicmaterial is performed from the direction S_(D) in which the azimuthangle direction along the inside plane direction of the substrate 20 isdifferent from the azimuth angle direction of the oblique evaporationdirection S_(C), more preferably from the direction at which thedifference of the azimuth angle direction is almost 90 degrees, and thecolumnar structures aligned towards the substrate with a predeterminedangle are grown. In that case, the evaporation angle θ₃ of the obliqueevaporation direction S_(C) should preferably be 5 degrees to 10degrees, and the evaporation angle θ₄ of the oblique evaporationdirection S_(D) should preferably be 25 degrees to 30 degrees.

[0184] Also, in the present embodiment, an explanation was made for thecase in which the present invention was applied to the case in which theinorganic alignment layer is formed on the underlayer which has a gapsection and is formed on the TFT array substrate. However, the presentinvention can be applied to the case in which the wiring layers and thelike are embedded in the substrate of the element side, and there isconcave area (gap section) on the flat and smooth surface of theunderlayer in the inorganic alignment layer due to a contact hole or thelike.

[0185] Overall Construction of Liquid Crystal Device

[0186] The overall construction of the liquid crystal device of thethird embodiment is the same as the overall construction of the liquidcrystal device of the first and the second embodiments, and explanationsthereof are omitted for the duplicated parts.

[0187] The scanning line driving circuit 104 may be only one side unlessthe delay of the scanning signal supplied to the scanning line 3 a is aproblem.

[0188] Also, the data line driving circuit 101 may be disposed on bothsides of the picture display area along the member of the picturedisplay area. For example, data lines 6 a in an odd-numbered may supplythe picture signal from the data line driving circuit disposed along onemember of the picture display area, and data lines 6 a in theeven-numbered row may supply the picture signal from the data linedriving circuit disposed along the opposite member of the picturedisplay area. By driving the data lines 6 a in a comblike manner, thearea occupied by the data line driving circuit can be enlarged; thus, amore complicated circuit becomes possible.

[0189] In addition, a pre-charge circuit may be provided under the thirdshading layer 53 as a corner bead so as not to be visible.

[0190] Additionally, a micro-lens may be formed so as to correspond toeach pixel on the facing substrate 20. By doing this way, the efficiencyof condensing the light of the incident light is improved; thus, abright liquid crystal device can be realized. Furthermore, a dichroicfilter for generating RGB colors may be formed on the facing substrate20 by piling the interference layers of which refractive indexes aredifferent and by using the interference of light. According to thedichroic-filter-built-in facing substrate, a brighter liquid crystaldevice can be realized.

[0191] Also, in each embodiment, although the switching element providedin each pixel is explained as positive staggered type polysilicon, orcoplanar type polysilicon, the present embodiment is effective in othertypes of TFTs such as an inverted-stagger type TFT and amorphous siliconTFT.

[0192] Electronic Device

[0193] The construction of an electronic device of the third embodimentis the same as the construction of the electronic devices of the firstand the second embodiments.

[0194] When a liquid crystal device is used for a light valve in theprojection type display device, the intensity of the incident light ishigh as compared to the case in which the liquid crystal device is usedfor a direct-view type liquid crystal device. Therefore, if thealignment layer is made of an organic alignment layer such as polyimide,deterioration of the alignment layer occurs noticeably and easily. Onthe other hand, in the electronic device of the present embodiment, thealignment layer is made of an inorganic oblique evaporation layer suchas of silicon oxide or the like, liquid crystal device 962R, 962G, and962B in which occurrence of inferior display due to the deterioratedalignment layer is reduced are provided. Therefore, the projection typedisplay device in which display quality is high can be realized even ifthe device is used for long periods. Also, in the liquid crystal devices962R, 962G, and 962B of each embodiment, when forming the inorganicalignment layer 36 on the underlayer having the gap section 80 asexplained above, the area on which the evaporation of inorganic materialis easy (the area 80 b where the area 80 a close to the gap section 80is excluded) and the area 80 b close to the gap section 80 where theoccurrence of defective areas of evaporation of inorganic material iseasy are formed separately. Therefore, the above first inorganic obliqueevaporation layer 36 a is formed in the area 80 b where the area closeto the gap section 80 is excluded, and the second inorganic obliqueevaporation layer 36 b is formed in the area 80 a close to the gapsection 80. Thus, there is no area with defective evaporation such asuneven evaporation of inorganic material or such as where no evaporationoccurred in the area 80 a close to the gap section 80.

EXPERIMENTAL EXAMPLE

[0195] The inventors of the liquid crystal device of the presentinvention performed an experiments to demonstrate the relationshipbetween the d/P as a ratio of cell gap d of the liquid crystal deviceand P as a helical pitch of the liquid crystal layer, and theeffectiveness of restricting the defect alignment The result of theexperiments are explained as follows.

Experimental Example 1

[0196] The liquid crystal device of above first embodiment which isprovided with the alignment layer made of two layers of inorganicoblique evaporation layer was produced. The pre-tilt angle θ was variedto various values by controlling the evaporation conditions while thecell gap d was made to be 3 μm, and the twist angle φ of the liquidcrystal layer was 90 degrees. The value of the helical pitch P of theliquid crystal was changed to 30, 15, 10, 7.5 (μm) by adjusting theamount of chiral complex which is added to the raw material for liquidcrystal. The existence of defective alignment was detected on thedisplay of an actual projection type display device by visualobservation under condition that the pre-tilt angle θ is 8 degrees. Theresults are shown in TABLE 1. TABLE 1 P(μm) d/P(−) Display Condition 300.1 A 15 0.2 O 10 0.3 O 7.5 0.4 B

[0197] In TABLE 1, “A” in “Display Condition” indicates the case inwhich the area in which the twist angle is 90 degrees or less isgenerated in the pixel. “O” indicates proper alignment. “B” indicatesthe case in which the area in which over-twist angle such as 270 degreesoccurred is generated in the pixel.

[0198] Regarding the above experiment, the above experimental resultsshown are typical examples under conditions in which the pre-tilt angleis set to be 8 degrees. However, almost the same results as in the caseof TABLE 1 were obtained under conditions in which the alignment layeris made of two layers of inorganic oblique evaporation layer, and thepre-tilt angle differed accordingly. That is, from TABLE 1, it isunderstood that defective alignment can be prevented under conditions inwhich the average pre-tilt angle θ is set to be 5 degrees to 20 degrees,d/P as a ratio of cell gap d of the liquid crystal device and thehelical pitch P of the liquid crystal layer is set to be 0.15<d/P<0.35,or more preferably to be 0.2<d/P<0.3. Although the above results areeffective under conditions in which the twist angle φ is 90 degrees, itwas also found that this tendency of d/P as a ratio of cell gap d andthe helical pitch P is in proportion with the twist angle φ of theliquid crystal device. Thus, by more generalized formula using the twistangle φ of the liquid crystal layer, it was found that the defectivealignment can be restricted if a relationship such as(0.3/360)φ<d/P<(1.4/360) is satisfied.

Experimental Example 2

[0199] The liquid crystal device of the second embodiment in which thealignment layer made of a single layer of inorganic oblique evaporationlayer was produced. The pre-tilt angle θ was varied to various values bycontrolling the evaporation conditions while the cell gap d is made tobe 3 μm, and the twist angle φ of the liquid crystal layer is 90degrees. The value of the helical pitch P of the liquid crystal waschanged to 20, 12, 8.6, 6.7 (μm) by adjusting the amount of chiralcomplex which is added to the raw material for liquid crystal. Theexistence of defective alignment was detected on the display of actualprojection type display device by visual observation under conditions inwhich the pre-tilt angle θ was 27 degrees. The results are shown inTABLE 2. TABLE 2 P(μm) d/P(−) Display Condition 20 0.15 C 12 0.25 O 8.60.35 O 6.7 0.45 B

[0200] In TABLE 2, “A” in “Display Condition” indicates the case inwhich the area in which the twist angle is 90 degrees or less isgenerated in the pixel. “O” indicates a proper alignment. “C” indicatesthe occurrence of a reverse twist domain “B” indicates the case in whichthe area in which over-twist angle such as 270 degrees occurred isgenerated in the pixel.

[0201] Regarding the above experiment, the above experimental resultsare shown as typical examples under condition in which the pre-tiltangle is set to be 27 degrees. However, nearly the same result as in thecase of TABLE 2 resulted under conditions in which the alignment layeris made of a single layer of inorganic oblique evaporation layer, andthe pre-tilt angle differs accordingly. That is, from TABLE 2, it isunderstood that defective alignment can be prevented under conditions inwhich the average pre-tilt angle θ is set to be 20 degrees or larger,d/P as a ratio of cell gap d of the liquid crystal device and thehelical pitch P of the liquid crystal layer is set to be 0.20<d/P<0.40,or more preferably to be 0.25<d/P<0.35. Also, it was found that thistendency of d/P as a ratio of cell gap d and the helical pitch P is inproportion with the twist angle φ of the liquid crystal device. Thus, bya more generalized formula using the twist angle φ of the liquid crystallayer, it was found that the defect alignment can be restricted if arelationship such as (0.8/360)φ<d/P<(1.6/360) is satisfied.

Experimental Example 3

[0202] Also, the inventors of the liquid crystal device of the presentinvention performed an experiment for proving the effect of the liquidcrystal device in the present invention. The result of the experimentsare explained as follows.

[0203] When the first inorganic oblique evaporation layer is formed byperforming the oblique evaporation of silicon oxide (SiO) from thedirection S_(A) unidirectionally so as to make the thickness of thelayer to be 10 nm on the surface of the TFT array substrate having thegap section on its surface and the TFT element and the pixel electrodesor the like are formed as shown in the third embodiment, the evaporationangle θ₁ (the angle made by the evaporation direction and the substrate)of SiO was changed within the range of 2.5 degrees to 15 degrees. Next,when the second inorganic oblique evaporation layer is formed byperforming the oblique evaporation of Silicon oxide (SiO) from thedirection S_(B) in which the azimuth angle direction φ is different fromthe azimuth angle direction of the above oblique evaporation directionS_(A) so as to make the thickness of the layer to be 20 nm, theevaporation angle θ₂ (the angle made by the evaporation direction andthe substrate) of SiO was changed within the range of 25 degrees to 30degrees. The oblique evaporation direction S_(A) is orthogonal to thescanning line 3 a and the capacity line 3 b in FIG. 2, and the obliqueevaporation direction S_(A) was made to be a direction from the bottomside of the plan view of FIG. 2. Also, the oblique evaporation directionS_(B) is along the scanning line 3 a and the capacity line 3 b in FIG.2, and the oblique evaporation direction S_(B) was made to be adirection from the right-hand side of the plan view of FIG. 2. Here, theazimuth angle direction of the oblique evaporation direction S_(B) andthe azimuth angle direction of the oblique evaporation direction S_(A)are different from each other by 90 degrees.

[0204] On the other hand, the inorganic oblique evaporation layer wasformed by performing the oblique evaporation of silicon oxide (SiO) onthe surface of the facing substrate on which the black matrix (shadinglayer) and the facing electrode is formed as shown in the thirdembodiment so as to make the thickness of the layer to be 10 nm from onedirection S_(C) unidirectionally. Here, the evaporation angle (anglemade by the evaporation direction the substrate) θ₃ of the obliqueevaporation direction S_(C) was set to be 5 degrees.

[0205] Next, various types of liquid crystal devices were produced byforming a seal section by seal-printing on the surface which becomes theside of the liquid crystal layer of one substrate on which the aboveinorganic oblique evaporation layer is formed while letting the inletfor pouring the liquid crystal be unsealed, by producing the liquidcrystal panel by bonding the TFT array substrate and the facingsubstrate, by pouring the fluorine positive liquid crystal into thepanel from the inlet, and by closing the inlet with the sealing member.

[0206] The alignment conditions of the liquid crystals of various liquidcrystal devices produced in this way were examined. The results areshown in TABLE 3. TABLE 3 Angle of first oblique evaporation (degrees)2.5 5 10 15 Angle of second oblique evaporation (degrees) 20 X X X X 25X ◯ ◯ X 30 X ◯ ◯ X 35 X X X X

[0207] In TABLE 3, ∘ indicates the alignment condition in which there isno defective evaporation area in which the evaporation of silicon oxideis not performed and the alignment condition in which there is noinferior alignment of liquid crystal molecules due to abnormality of thealignment layer. Also, × indicates the alignment condition in whichthere is defective alignment areas in which the evaporation of siliconoxide is not performed, and the alignment condition in which there isinferior alignment of liquid crystal molecules due to the abnormalitiesin the alignment layer. As can be understood from the result of TABLE 3,when the evaporation angle (first evaporation angle) is set to be 2.5degrees or to be 15 degrees(an angle which is not in the range of 5degrees to 10 degrees) when forming the first inorganic obliqueevaporation layer, the alignment condition becomes disordered, even ifthe evaporation angle (second evaporation angle) is at any angle. Whenthe evaporation angle (second evaporation angle ) is set to be 25degrees or to be 30 degrees(angle which is not in the range of 25degrees to 30 degrees) when forming the first inorganic obliqueevaporation layer, the alignment condition becomes disordered, even ifthe first inorganic oblique evaporation angle (first evaporation angle)is any angle.

[0208] In contrast, in the liquid crystal device in which theevaporation angle (first evaporation angle) is set to be 5 degrees to 10degrees when forming the first inorganic oblique evaporation layer, andat the same time, the evaporation angle (second evaporation angle) isset to be 25 degrees to 30 degrees when forming the second inorganicoblique evaporation layer, the alignment condition becomes in order;thus, it can be understood that the alignment condition is good.

Experimental Example 4

[0209] When the first inorganic oblique evaporation layer is formed byperforming the oblique evaporation of silicon oxide (SiO) from thedirection S_(A) unidirectionally, the thickness of the layer was changedto be 2.5 nm to 20 nm on the surface of the TFT array substrate havingthe gap section on its surface and the TFT element and the pixelelectrodes or the like are formed as shown in the third embodiment.Next, when the second inorganic oblique evaporation layer is formed byperforming the oblique evaporation of silicon oxide (SiO) from thedirection S_(B) of which azimuth angle direction φ is different from theazimuth angle direction of the above oblique evaporation directionS_(A), the thickness of the layer was changed to be 8 nm to 45 nm. Here,the oblique evaporation direction S_(A) is orthogonal to the scanningline 3 a and the capacity line 3 b in FIG. 2, and the obliqueevaporation direction S_(A) was made to be a direction from the bottomside of the plan view of FIG. 2. The evaporation angle (angle made bythe evaporation direction and the substrate) θ₁ of SiO was set to be 25degrees. Also, the oblique evaporation direction S_(B) is along thescanning line 3 a and the capacity line 3 b in FIG. 2, and the obliqueevaporation direction S_(B) was made to be a direction from theright-hand side of the plan view of FIG. 2. Also, the evaporation angle(angle made by the evaporation direction and the substrate) θ₂ of SiOwas set to be 25 degrees. Here, the azimuth angle direction of theoblique evaporation direction S_(B) and the azimuth angle direction ofthe oblique evaporation direction S_(A) differ from each other by 90degrees.

[0210] On the other hand, an inorganic oblique evaporation layer wasformed by performing the oblique evaporation of silicon oxide (SiO) onthe surface of the facing substrate on which the black matrix (shadinglayer) and the facing electrode is formed as shown in the thirdembodiment so as to make the thickness of the layer to be 10 nm from onedirection S_(C) unidirectionally. Here, the evaporation angle (anglemade by the evaporation direction the substrate) θ₃ of the obliqueevaporation direction S_(C) was set to be 5 degrees.

[0211] Next, various types of liquid crystal devices were produced byforming the seal section by seal-printing on the surface which becomesthe side of the liquid crystal layer of one substrate on which the aboveinorganic oblique evaporation layer is formed while letting the inletfor pouring the liquid crystal be unsealed, by producing the liquidcrystal panel by bonding the TFT array substrate and the facingsubstrate, by pouring a fluorine positive liquid crystal into the panelfrom the inlet, and by closing the inlet with the sealing member.

[0212] The alignment conditions of the liquid crystals of various liquidcrystal devices produced in this way were examined. The results areshown in TABLE 4. TABLE 4 Thickness of first oblique Thickness of firstoblique evaporation layer (nm) evaporation layer (nm) 2.5 5 10 16 15 8 XL L L L 10 S ◯ ◯ ◯ L 40 S ◯ ◯ ◯ L 45 S S S S S

[0213] In TABLE 4, “L” indicates that the average pre-tilt angle of theliquid crystal is less than 3 degrees as a defect because of lowpre-tilt. “S” indicates average pre-tilt angle of the liquid crystal islarger than 20 degrees as a defect because of high pre-tilt. ∘ indicatesthe alignment condition in which there is no disordered alignment of theliquid crystal, and the average pre-tilt angle is 5 degrees to 15degrees as a good alignment. × indicates the alignment condition inwhich there is disordered alignment of the liquid crystal molecules.

[0214] As can be understood from the results of TABLE 4, when thethickness of the layer is set to be 2.5 nm or to be 20 nm (not in therange of 5 nm to 16 nm), when forming the first inorganic obliqueevaporation layer, the pre-tilt of the liquid crystal molecules is lowor high, or the alignment direction of the liquid crystal moleculesbecomes disordered, and the alignment condition is inferior, even if thethickness of the second inorganic oblique evaporation layer is of anyvalue. When the thickness of the layer is set to be 8 nm or to be 45 nm(not in the range of 10 nm to 40 nm), when forming the second inorganicoblique evaporation layer, the pre-tilt of the liquid crystal moleculeis low or high, or the alignment direction of the liquid crystalmolecules become disordered, and the alignment condition is inferior,even if the thickness of the first inorganic oblique evaporation layeris of any value.

[0215] In contrast, in the liquid crystal device in which theevaporation angle (first evaporation angle) is set to be 5 degrees to 16degrees when forming the first inorganic oblique evaporation layer, andat the same time, the evaporation angle (second evaporation angle) isset to be 10 degrees to 40 degrees when forming the second inorganicoblique evaporation layer, the alignment condition becomes ordered;thus, it can be understood that the alignment condition is good becausethe average pre-tilt angle is in the range of 5 degrees to 10 degrees.

[0216] As explained above in detail, according to the liquid crystaldevice of the present invention, by optimizing the d/P as a ratio of thecell gap d of the liquid crystal device and the helical pitch P of theliquid crystal layer, the disclination which occurred in theconventional liquid crystal device using inorganic alignment layer canbe prevented effectively; thus a liquid crystal device with no defectivedisplay such as light leakage because of disclination and with goodcontrast can be realized. Also, the liquid crystal device which isexcellent with regard to light resistance and heat resistance, and whichis favorable to be used as a liquid crystal light valve can be realizedas compared to a liquid crystal device having an inorganic alignmentlayer made of an organic layer such as of polyimide.

[0217] Also, according to the liquid crystal device of the presentinvention, an inorganic alignment layer formed on the underlayer havingthe gap section is made of the first inorganic oblique evaporation layerhaving columnar structures of slanted inorganic material and a secondinorganic oblique evaporation layer of which the azimuth angle directionof the slanting direction of the columnar structures of the inorganicmaterial is different from the azimuth angle direction of the slantingdirection of the columnar structures of the first inorganic obliqueevaporation layer. Furthermore, because above second inorganic obliqueevaporation layer is formed in the area close to the above gap section,the occurrence of defective areas of evaporation where there is unevenevaporation of inorganic material, and the area where evaporation is notperformed in the area close to above gap section can be reduced.Accordingly, even if the pixel pitch is as fine as 20 μm or less, thereis no abnormality in the inorganic alignment layer formed on theunderlayer having the gap section on the surface, the defectivealignment of the liquid crystals due to the abnormality of alignmentlayer can be prevented, and the occurrence of inferior display such aslow contrast can be prevented. Such effect can also be obtained even ifthe pixel pitch becomes as fine as 15 μm or less.

[0218] Additionally, by adopting the present liquid crystal device, aprojection type display device with high display quality can berealized.

What is claimed is:
 1. A liquid crystal device comprising: a liquidcrystal layer (50) disposed between a pair of substrates (20) facingeach other; and inorganic alignment layers (36, 42) disposed on asurface of a liquid crystal layer side of the pair of the substrates;wherein the range of average pre-tilt angle θ of liquid crystalmolecules 50 a in the liquid crystal layer is 5 degrees≦θ≦20 degrees:and twist angle φ of the liquid crystal molecules (50 a) in the liquidcrystal layer, cell gap d, and helical pitch P of the liquid crystalmolecules in the liquid crystal layer satisfy the relationship of(0.6/360)φ<d/P<(1.4/360)φ.
 2. A liquid crystal device according to claim1, wherein: the inorganic alignment layers (36, 42) are made of twolayers of oblique evaporation layers (36 a, 36 b) which have columnarstructures of an inorganic material slanting in different directions;azimuth angle directions of the slanting direction of the columnarstructures of the inorganic material forming both oblique evaporationlayers are different inside the plane of the substrate.
 3. A liquidcrystal device comprising: a liquid crystal layer (50) disposed betweena pair of substrates (20) facing each other; inorganic alignment layers(36, 42) disposed on a surface of a liquid crystal layer side of thepair of the substrates; wherein the range of average pre-tilt angle θ ofliquid crystal molecules 50 a of the liquid crystal layer is θ>20degrees; and twist angle φ of the liquid crystal molecules (50 a) of theliquid crystal layer, cell gap d, and helical pitch P of the liquidcrystal molecules of the liquid crystal layer satisfy the relationshipof (0.8/360)φ<d/P<(1.6/360)φ.
 4. A liquid crystal device according toclaim 3, wherein the alignment layers are made of oblique evaporationlayer (36 a, 36 b) which are columnar structure of inorganic materialslanting in different directions.
 5. A liquid crystal device accordingto claim 1 or 3, wherein the alignment layers are oblique evaporationlayers made of silicon oxide.
 6. A projection display device, providedwith a liquid crystal device according to claim 1 or 3, comprising: alight source for emitting light; the liquid crystal device whichmodulates the light emitted from the light source; and a magnifyingprojection optical system which magnifies the light modulated by theliquid crystal device and projects the light on a projection plane.
 7. Aliquid crystal device comprising: a liquid crystal layer (50) disposedbetween a pair of substrates (20) facing each other; inorganic alignmentlayers (36, 42) disposed on a surface of a liquid crystal layer side ofthe pair of the substrates, and having the gap section (80) comprising afirst inorganic oblique evaporation layer (36 a) and a second inorganicoblique evaporation layer (36 b) formed in an area close to the gapsection (80) and on the first inorganic oblique evaporation layer (36a); an underlayer of at least one of the inorganic alignment layers (36,42) having gap section (80); wherein the first and the second inorganicoblique evaporation layers (36 a, 36 b) are made of slant columnarstructure of inorganic material; and wherein azimuth angle directions ofslanting direction of columnar structure of inorganic materialconstructing both the first and the second oblique evaporation layersare different inside the plane of the substrate.
 8. A liquid crystaldevice comprising: a liquid crystal layer (50) disposed between a pairof substrates (20) facing each other; a plurality of pixel electrodesdisposed in a matrix, a plurality of switching devices which drive theplurality of the pixel electrode, a plurality of data lines (6 a) and aplurality of scanning lines (3 a) connected respectively to theplurality of the switching devices are provided on either one of thepair of substrates; facing electrodes provided on the other substrate;inorganic alignment layers (36, 42) provided respectively on the surfaceof the liquid crystal side of the pair of substrates; an underlayer ofat least either one of an inorganic alignment layer on the side of whichthe switching device is provided has a gap section (80) on its surface;the inorganic alignment layers (36, 42) formed on the underlayer havingthe gap section (80), comprising a first inorganic oblique evaporationlayer (36 a) and a second inorganic oblique evaporation layer (36 b)formed in an area close to the gap section (80) and on the firstinorganic oblique evaporation layer (36 a); the first and the secondinorganic oblique evaporation layers (36 a, 36 b) comprise slantedcolumnar structures of an inorganic material; azimuth angle directionsof slanting directions of columnar structures of inorganic materialsconstructing both the first and the second oblique evaporation layersare different inside the plane of the substrate.
 9. A liquid crystaldevice according to claim 7 or 8, wherein azimuth angles of slantingdirections of columnar structures of an inorganic material constitutingboth the first and the second oblique evaporation layers (36 a, 36 b)differ by nearly 90 degrees.
 10. A liquid crystal device according toclaim 7 or 8, wherein the thickness of the first inorganic obliqueevaporation layer (36 a) is in the range of 5 nm to 16 nm, and thethickness of the second organic oblique evaporation layer (36 b) is inthe range of 10 nm to 40 nm.
 11. A liquid crystal device according toclaim 7 or 8, wherein pre-tilt angle θ_(p) of liquid crystal moleculesof the liquid crystal layer is in the range of 5 to 15 degrees.
 12. Aliquid crystal device according to claim 7 or 8, wherein the inorganicalignment layers (36, 42) are oblique evaporation layers made of siliconoxide.
 13. A manufacturing method for a substrate for a liquid crystaldevice by oblique evaporation of an inorganic material on an underlayerhaving a gap section on the surface formed on the substrate so as toform the inorganic alignment layers, comprising the steps of: a firstoblique evaporation step by unidirectional oblique evaporation of theinorganic material on the substrate on which the underlayer having thegap section is formed on the surface of the substrate so as to form thefirst inorganic oblique evaporation layer 36 a; a second obliqueevaporation step by oblique evaporation of the inorganic material fromat least a different azimuth angle inside the substrate from the obliqueevaporation direction of the inorganic material in the first obliqueevaporation step so as to form the second oblique evaporation layer 36 bin an area close to the gap section and on the first inorganic obliqueevaporation layer.
 14. A manufacturing method for a substrate for aliquid crystal device, according to claim 13, wherein the azimuth angleof the oblique evaporation direction (S_(A)) of the inorganic materialin the first oblique evaporation step and the azimuth angle of theoblique evaporation direction (S_(B)) of the inorganic material in thesecond oblique evaporation step differ by nearly 90 degrees.
 15. Amanufacturing method of a substrate for a liquid crystal deviceaccording to claim 13, wherein: deposition angle (θ₁) between theoblique evaporation direction of the inorganic material in the firstoblique evaporation step and the substrate is in the range of 5 to 10degrees; deposition angle (θ₂) between the oblique evaporation directionof the inorganic material in the second oblique evaporation step and thesubstrate is in the range of 25 to 30 degrees.
 16. A manufacturingmethod for a substrate for a liquid crystal device, according to claim13, wherein the oblique evaporation direction (S_(A), S_(B)) is selectedaccording to a construction and disposition of the gap section (80)formed on the surface of the underlayer in the oblique evaporation ofinorganic material in at least one of the first oblique evaporation stepand the second oblique evaporation step.
 17. A manufacturing method fora the substrate for a liquid crystal device, according to claim 13,wherein: the thickness of the inorganic oblique evaporation layer formedin the first oblique evaporation step is in the range of 5 nm to 16 nm;and the thickness of the inorganic oblique evaporation layer formed inthe second oblique evaporation step is in the range of 10 nm to 40 nm.18. A manufacturing method for a substrate for a liquid crystal device,according to claim 13, wherein the inorganic material is silicon oxide.19. A projection display device, provided with a liquid crystal deviceaccording to claim 7 or 8, comprising: a light source for emittinglight; the liquid crystal device which modulates the light emitted fromthe light source; and a magnifying projection optical system whichmagnifies the light modulated by the liquid crystal device and projectsthe light on a projection plane.